AI Summary & Key Takeaways
AI InsightThe barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transistors or also show promise as small signal zero-bias rectifiers and microwave mixers.
📌 3 Key Takeaways
Abstract
We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts were made by dc magnetron sputtering technique, and hafnium dioxide (HfO2) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique. The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO2 layer thickness. The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transistors or also show promise as small signal zero-bias rectifiers and microwave mixers.