Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2018 / Cilt: 8 - Sayı: 3

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2

Ara Katmanlı Si-Tabanlı Heteroeklemin Dielektrik Karakterizasyonu

Pages
119–129
Publication Date
2022-10-18
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics.
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Key Findings & Data:Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface.
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Conclusion & Impact:The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHzfrequency range at room temperature. As an electrical parameters, interface states distribution and series resistancevalues was determined. In addition to these, it is found that the dielectric properties such as dielectric loss andconstant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values wasdepended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values

Özet

Bu çalışmada, Al/TiO2 /p-Si/Al heteroeklemi üretildi ve bazı elektrik ve dielektrik karakteristikleri araştırıldı. TiO2 arayüzey katmanının sentezlenmesi için yüzey düzgünlüğü ve kararlılığı gibi sahip olduğu bazı avantajlardan dolayı atomik katman kaplama tekniği kullanıldı. Elektriksel ve dielektrik karakteristiklerinin belirlenmesi için, oda sıcaklığında, -1 ile +1 V beslem voltajı ve 10 kHz-1MHz frekans değerleri aralıklarında empedans spektroskopisi ölçümleri yapılmıştır. Elektriksel parametreler olarak arayüzey halleri dağılımı ve seri direnç değerleri belirlenmiştir. Bunlara ek olarak, dielektrik kaybı ve katsayısı, elektriksel modülün gerçek ve imajiner kısmı ve AC elektrik iletkenliği gibi dielektrik parametrelerin frekansa ve voltaja güçlü bir şekilde bağlı olduğu bulunmuştur. Elektrik ve dilelektrik karakteristikler üretilen aygıtın arayüzey halleri ve polarizasyon değerlerinin düşük frekanslarda AC sinyalini takip edebildiğini göstermektedir.

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Cite This Article

KARABULUT, A. (2022). Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 8 - Sayı: 3, 119–129. https://ajindex.com/articles/538551

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References (9)

  1. Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S, Bülbül MM, 2013. The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/ perylene/p-Si MPS type Schottky barrier diodes. Current Applied Physics, 13: 1225-1230.
  2. Yücedağ I, Kaya A, Tecimer H, Altındal Ş, 2014. Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures. Mater. Sci. Semicond. Processing, 28: 37-42.
  3. Yücedağ I, Kaya A, Altındal Ş, Uslu I, 2014. Frequency and voltagedependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature. Chinese Physics B, 23: 047304. Ye PD, Wilk GD, Kwo J, Yang B, Gossmann HJL, Frei M, Chu SNG, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J, 2003. GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition. IEEE Electron Device Letters, 24: 209-211.
  4. Yang L, Chao X, Liang P, Wei L, Yang Z, 2015. Electrical properties and high-temperaturedielectric relaxation behaviors of NaxBi(2−x)/3Cu3Ti4O12 ceramics. Mater. Res. Bull., 64: 216–222.
  5. Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance– conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures. Materials Science in Semiconductor Processing, 39: 400–407.
  6. Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance– conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer. Mater. Res. Express, 2: 046301. Turut A, Karabulut A, Efeoglu H, 2017. Electrical characteristics of atomic layer deposited Au/Ti/Al2 O3/n-GaAs MIS structures over a wide measurement temperature. Journal of Optoelectronics and Advanced Materials, 19: 424-433.
  7. Tecimer H, Uslu H, Alahmed ZA, Yakuphanoğlu F, 2014. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs). Composites Part B: Engineering, 57: 25-30.
  8. Tataroğlu A, Yücedağ İ, Altindal Ş, 2008. Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures. Microelectronic Engineering, 85: 1518- 1523. Sze SM, 1981. Physics of Semiconductor Devices, second Ed. Willey & Sons, NewYork, USA. 815 p. Selçuk AB, Ocak SB, Aras FG, Orhan EO, 2014. Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device. Journal of Electronic Materials, 43: 3263–3269.
  9. Sekhar MC, Reddy NNK, Akkera HS, Reddy BP, Rajendar