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Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2026 / Cilt: 8 Sayı: 3

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

TiO2 Ara Katmanlı Si-Tabanlı Heteroeklemin Dielektrik Karakterizasyonu

Abdulkerim Karabulut(SINOP UNIVERSITY, FACULTY OF ENGINEERING AND ARCHITECTURE, DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING)0000-0003-1694-5458
Pages
119–129
Publication Date
2018-09-30
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The electrical and dielectric characteristics show that interface states and polarization values of fabricated device can follow AC signal at low frequency values.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectric characteristics.
📊
Key Findings & Data:Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the some advantages such as uniformity and stability of surface.
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Conclusion & Impact:The electrical and dielectric characteristics show that interface states and polarization values of fabricated device can follow AC signal at low frequency values.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:Dielektrik özellikler · TiO2 · MIS yapı

Abstract

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectric characteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the some advantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics, impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHz frequency range at room temperature. As an electrical parameters, interface states distribution and series resistance values was determined. In addition to these, it is found that the dielectric properties such as dielectric loss and constant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values was depended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface states and polarization values of fabricated device can follow AC signal at low frequency values.

Özet

Bu çalışmada, Al/TiO2/p-Si/Al heteroeklemi üretildi ve bazı elektrik ve dielektrik karakteristikleri

🔖

Cite This Article

Karabulut, A. (2018). Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 8 Sayı: 3, 119–129. https://ajindex.com/articles/1272830

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