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Journals / International Journal of Chemistry and Technology / 2018 / Volume: 2 Issue: 2

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Abdulkerim Karabulut(SİNOP ÜNİVERSİTESİ)0000-0003-1694-5458
İkram Orak(BİNGÖL ÜNİVERSİTESİ)0000-0003-2318-9718
Abdülmecit Türüt(İSTANBUL MEDENİYET ÜNİVERSİTESİ)0000-0002-4664-4528
Pages
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Publication Date
2018-12-28
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transis tors or also show promise as small signal zero-bias rectifiers and microwave mixers.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO 2 / n -GaAs.
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Key Findings & Data:Metal rectifying contacts were made by dc magnetron sputtering technique, and h afnium dioxide ( HfO 2 ) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique.
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Conclusion & Impact:The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transis tors or also show promise as small signal zero-bias rectifiers and microwave mixers.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Metal-Oxide-semiconductor structures · GaAs semiconductor · Hafnia HfO2

Abstract

We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO 2 / n -GaAs. Metal rectifying contacts were made by dc magnetron sputtering technique, and h afnium dioxide ( HfO 2 ) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique. The series resistance value from the forward bias current-voltage ( I-V ) curves of 3 nm and 5 nm MIS structures very slightly has reduced with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO 2 layer thickness. The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transis tors or also show promise as small signal zero-bias rectifiers and microwave mixers.

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Cite This Article

Karabulut, A., Orak, İ., Türüt, A. (2018). Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. International Journal of Chemistry and Technology, Volume: 2 Issue: 2. https://doi.org/10.32571/ijct.456902

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