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Dergiler / Gazi University Journal of Science / 2014 / Cilt: 27 - Sayı: 3

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurement

Adem TATAROĞLU
G. GÜVEN
S. YILMAZ
A. BÜYÜKBAŞ
Sayfa
909–915
Yayın Tarihi
2014-04-04
DOI
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The values of the ΦB and ND decrease with the increasing frequency.

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Amaç & Hipotez:Öz Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature.
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Temel Bulgular & Veri:The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency.
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Sonuç & Katkı:The values of the ΦB and ND decrease with the increasing frequency.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Anahtar Kelimeler MOS capacitor · C-f and G/ω-f characteristics · Barrier height

Özet

Öz Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and ND decrease with the increasing frequency.

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Bu Makaleye Atıf Yap

TATAROĞLU, A., GÜVEN, G., YILMAZ, S., BÜYÜKBAŞ, A. (2014). Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurement. Gazi University Journal of Science, Cilt: 27 - Sayı: 3, 909–915. https://ajindex.com/articles/254765

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Kaynakça (17)

  1. E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982).
  2. S. M. Sze, Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 1981).
  3. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed. Wiley, New York, (1998).
  4. M. K. Hudait, S. B. Krupanidhi, Solid State Electron. 44, 1089 (2000).
  5. A. Singh, K. C. Reinhardt, W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
  6. A. Tataroğlu, Ş. Altındal, Vacuum 82, 1203 (2008).
  7. O. Pakma, N. Serin, T. Serin, Ş. Altındal, J. Phys. D: Appl. Phys. 41, 215103 (2008).
  8. S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, J. Alloys Compd. 583, 476 (2014).
  9. H. C. Card, E. H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
  10. C. R. Crowell, S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
  11. S. Kar, W. E. Dahlke, Solid State Electron. 15, 221 (1972).
  12. S. Jeon, S. Park, Microelectron. Eng. 88, 872 (2011).
  13. U. Kelberlau, R. Kassing, Solid State Electron. 22, 37 (1979). [14] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174, 269 (2010).
  14. Sathyamoorthy, R. S. Chand, J. Kumar, J. Appl. Phys. A 63, 171 (1996).
  15. W. M. R. Divigalpitiya, Solar Energ. Mater. 18, 253 (1989).
  16. J. W. Kim, J. W. Lee, Appl. Sur. Sci. 250, 247 (2005).
  17. N. Kavasoğlu, C. Tozlu, O. Pakma, A. S. Kavasoğlu, S. Özden, B. Metin, Ö. Birgi, Ş. Oktik, Synthetic Met. 59, 1880 (2009).