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Dergiler / Gazi University Journal of Science / 2014 / Cilt: 27 - Sayı: 3

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements

Adem TATAROĞLU
G. GÜVEN
S. YILMAZ
A. BÜYÜKBAŞ
Sayfa
909–915
Yayın Tarihi
2014-04-04
DOI
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The values of the ΦB and ND decrease with the increasing frequency.

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Amaç & Hipotez:Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature.
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Temel Bulgular & Veri:The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency.
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Sonuç & Katkı:The values of the ΦB and ND decrease with the increasing frequency.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:MOS capacitor · C-f and G/ω-f characteristics · Barrier height

Abstract

Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and ND decrease with the increasing frequency.

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Bu Makaleye Atıf Yap

TATAROĞLU, A., GÜVEN, G., YILMAZ, S., BÜYÜKBAŞ, A. (2014). Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science, Cilt: 27 - Sayı: 3, 909–915. https://ajindex.com/articles/667209

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