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Journals / Gazi University Journal of Science / 2014 / Cilt: 27 - Sayı: 3

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurement

Adem TATAROĞLU
G. GÜVEN
S. YILMAZ
A. BÜYÜKBAŞ
Pages
909–915
Publication Date
2014-04-04
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The values of the ΦB and ND decrease with the increasing frequency.

📌 3 Key Takeaways

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Objective & Hypothesis:Öz Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature.
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Key Findings & Data:The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency.
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Conclusion & Impact:The values of the ΦB and ND decrease with the increasing frequency.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Anahtar Kelimeler MOS capacitor · C-f and G/ω-f characteristics · Barrier height

Özet

Öz Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and ND decrease with the increasing frequency.

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Cite This Article

TATAROĞLU, A., GÜVEN, G., YILMAZ, S., BÜYÜKBAŞ, A. (2014). Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurement. Gazi University Journal of Science, Cilt: 27 - Sayı: 3, 909–915. https://ajindex.com/articles/254765

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