It is shown that by using Norde's function F(V)=$V/gamma-(kT/q)LN(I/SA^ast T^2)$ at different temperatures, barrier height $Phi_B$ , ideality factor n and series resistance $R-S$ can be determined even in the case $1
📌 3 Key Takeaways
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Objective & Hypothesis:In this study, temperature dependence the forward current-voltage (I-V) characteristics of both Al/p-Si and Au/n-Si Schottky diodes with series resistance and natural oxide layer discussed.
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Key Findings & Data:In this study, temperature dependence the forward current-voltage (I-V) characteristics of both Al/p-Si and Au/n-Si Schottky diodes with series resistance and natural oxide layer discussed.
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Conclusion & Impact:It is shown that by using Norde's function F(V)=$V/gamma-(kT/q)LN(I/SA^ast T^2)$ at different temperatures, barrier height $Phi_B$ , ideality factor n and series resistance $R-S$ can be determined even in the case $1
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Abstract
In this study, temperature dependence the forward current-voltage (I-V) characteristics of both Al/p-Si and Au/n-Si Schottky diodes with series resistance and natural oxide layer discussed. It is shown that by using Norde's function F(V)=$V/gamma-(kT/q)LN(I/SA^ast T^2)$ at different temperatures, barrier height $Phi_B$ , ideality factor n and series resistance $R-S$ can be determined even in the case $1
Özet
Bu çalışmada, doğal arayüzey oksit tabakası ve seri dirence sahip Al/p-Si ve Au/n-Si Schotky diyotlarının akım-voltaj(I-V) karakteristikleri sıcaklığa bağlı incelendi, idealite faktörünün $1
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Cite This Article
ALTINDAL, Ş., TATAROĞLU, A., ÖZER, M., DÖKME, İ. (2022). Norde method for Schottky diodes with high series resistance. Fırat Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, Cilt: 13 - Sayı: 1, 141–146. https://ajindex.com/articles/513845