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Dergiler / Gazi University Journal of Science / 2026 / Volume: 20 Issue: 4

Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures

Funda Parlaktürk
Arif Agasıev
Adem Tataroğlu
Şemsettin Altındal
Sayfa
—
Yayın Tarihi
2010-03-28
DOI
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The observations are comparable with the other values for BTO structures reported in the literature.  

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Amaç & Hipotez:The electrical properties of Au/Bi 4 Ti 3 O 12 /SnO 2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ w -V measurements.
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Temel Bulgular & Veri:Dielectric constant( e '), dielectric loss( e '') and dielectric tangent(tan d ) were found as 170, 309 and 1,8 respectively at 50 kHz.
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Sonuç & Katkı:The observations are comparable with the other values for BTO structures reported in the literature.  
🔬Tür:Article
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Au/Bi4Ti3O12/SnO2 structures · Dielectric constant · Dielectric loss

Abstract

The electrical properties of Au/Bi 4 Ti 3 O 12 /SnO 2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ w -V measurements. The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization. Dielectric constant( e '), dielectric loss( e '') and dielectric tangent(tan d ) were found as 170, 309 and 1,8 respectively at 50 kHz. C-V and G/ w -V were measured in the frequency range of 1 kHz-5 MHz. It was found that dielectric constant( e ') and dielectric loss( e '') systematically decrease with increasing frequency in 10 kHz-1 MHz frequency range and tan d versus frequency plot exhibits a minimum at about 5 kHz. The ideality factor and series resistance were found to be 1,5 and 1030 W respectively from I-V measurements and series resistance was found as 350 W from the measured conductance in strong accumulation region. The observations are comparable with the other values for BTO structures reported in the literature.  

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Bu Makaleye Atıf Yap

Parlaktürk, F., Agasıev, A., Tataroğlu, A., Altındal, Ş. (2010). Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures. Gazi University Journal of Science, Volume: 20 Issue: 4. https://ajindex.com/articles/1270084

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Kaynakça (23)

  1. Sze, S. M., “Physics of Semiconductor Devices 2nd ed.”, John Wiley & Sons, New York, 362-390 (1981).
  2. Cummins, S.E., “A new bistable ferroelectric light gate or display element”, Proc. IEEE, 55: 1537- 1538 (1967).
  3. Cummins, S. E., Cross L. E., "Crystal symmetry, optical properties, and ferroelectric polarization of Bi4Ti3O12 single crystals", Appl. Phys. Letters, 10: 14-16 (1967).
  4. Wu, S.Y., Takei, W.J., Francoma, M.H., “Transient switching response and partial switching phenomena in coarse-grained rhombohedral-phase PLZT ceramics”, Ferroelectrics, 10: 43-46 (1976).
  5. Agasiyev, A. A., Mamedov, M.Z., Muradov, M. B., “Electrical Conductivity and Dielectric Properties of Bi4Ti3O12”, J. Phys. III France, 6 (7): 853-861 (1996).
  6. B.H., Park, S. J., Hyun, “Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films”, Journal of Applied Physics, 84: 4428-4435 (1998).
  7. Joshi, P.C., Krupanidh, S.B., “Structural and electrical studies on rapid thermally processed ferroelectric Bi4Ti3O12 thin films by metalloorganic solution deposition”, Journal of Applied Physics, 72 (12): 5817-5819 (1992).
  8. Pintilie, L., Pintilie, I., Petre, D., Botila, T., Alexe M., “Trap characterization of Bi4Ti3O12 thin films by thermally stimulated currents”, Appl. Physica A, 69: 105-109 (1999).
  9. Fu, L., Liu, K., Zhang, B., Chu, J., “Capacitancevoltage characteristics of Bi4Ti3O12/p-Si interface”, Appl. Phys. Letters, 72 (14): 1784-1786 (1998).
  10. Norde, H., “A modified forward I-V plot for Schottky diodes with high series resistance”, Journal of Applied Physics, 50 (7): 5052-5053 (1979).
  11. Sato, K., Yasamura, Y., “Study of forward I-V plot for Schottky diodes with high series resistance”, J.Appl.Phys., 58 (9): 3655-3657 (1985).
  12. Bohlin, K.E., “Generalized Norde plot including determination of the ideality factor”, J.Appl.Phys., 60 (3): 1223-1224 (1986).
  13. Cheung, S.K., Cheung, N.W., “Extraction of Schottky diode parameters from forward currentvoltage characteristics”, Appl.Phys. Lett., 49 (2): 85-87 (1986).
  14. Green, M.A., King, F.D., Shewchun, J., “Minority Carrier MIS Tunnel Diodes and their Application to Electron and Photovoltaic Energy Conversion Part I: Theory”, Solid-State Electronics, 17: 551- 561 (1974).
  15. Özdemir, S., Altındal, Ş., “Temperature dependent electrical characteristics of Al-SiOx-pSi solar cells”, Solar Energy Materials and Solar Cells, 32 (2): 115-127 (1994).
  16. W. P., Kang, J. L., Davidson, Y., Gurbuz, D. V., Kerns, “Temperature Dependence and Effect of Series Resistance on Electrical Characteristics of a Polycrystalline Diamond MIS Diode”, Journal of Applied Physics, 78 (2): 1101-1107 (1995).
  17. Nicollian, E.H., Brews, J.R., “Metal Oxide Semiconductor (MOS) Physics and Technology”, John Wiley & Sons, New York, 423–491 (1982).
  18. Kong, L. B., Ma, J., “Randomly oriented Bi4Ti3O12 thin films derived from a hybrid solgel process”, Thin Solid Films, 379: 89-93 (2000).
  19. Wang, H., Fu, L. W., Hang, S. X., “Preparation and Properties of Bi4Ti3O12 Single-Crystal Thin Films by Atmospheric Pressure Metalorganic Chemical Vapor Deposition”, J. Appl. Phys., 73 (11): 7963 (1993).
  20. Joshi, P.C., Krupandihi, S.B., “Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films”, Appl.Phys. Lett., 62 (16): 1928-1930 (1993).
  21. A.Q., Jiang, G.H., Li,, L.D., Zhang, “Dielectric study in nanocrystalline Bi4Ti3O12 prepared by chemical coprecipitation”, J.Appl.Phys., 83 (9): 4878-4883 (1998).
  22. Lee, J.J., Alluri, P., Dey, S.K., "Effect of interfaces on the electrical behavior of (Pb0.72La 0.28) TiO3 thin films”, Appl.Phys.Lett., 65 (16): 2027-2029 (1994)
  23. Wu, S.Y., Takei, W.J., Francoma, M.H., “Transient switching response and partial switching phenomena in coarse-grained rhombohedral-phase PLZT ceramics”, Ferroelectrics, 10: 43-46 (1976).