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Journals / Gazi University Journal of Science / 2026 / Volume: 20 Issue: 4

Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures

Funda Parlaktürk
Arif Agasıev
Adem Tataroğlu
Şemsettin Altındal
Pages
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Publication Date
2010-03-28
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The electrical properties of Au/Bi 4 Ti 3 O 12 /SnO 2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ w -V measurements.
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Key Findings & Data:Dielectric constant( e '), dielectric loss( e '') and dielectric tangent(tan d ) were found as 170, 309 and 1,8 respectively at 50 kHz.
💡
Conclusion & Impact:The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization.
🔬Design:Article
📍Scope:Comprehensive Sample
⚙️Variables:Au/Bi4Ti3O12/SnO2 structures · Dielectric constant · Dielectric loss

Abstract

The electrical properties of Au/Bi 4 Ti 3 O 12 /SnO 2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ w -V measurements. The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization. Dielectric constant( e '), dielectric loss( e '') and dielectric tangent(tan d ) were found as 170, 309 and 1,8 respectively at 50 kHz. C-V and G/ w -V were measured in the frequency range of 1 kHz-5 MHz. It was found that dielectric constant( e ') and dielectric loss( e '') systematically decrease with increasing frequency in 10 kHz-1 MHz frequency range and tan d versus frequency plot exhibits a minimum at about 5 kHz. The ideality factor and series resistance were found to be 1,5 and 1030 W respectively from I-V measurements and series resistance was found as 350 W from the measured conductance in strong accumulation region. The observations are comparable with the other values for BTO structures reported in the literature.  

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Cite This Article

Parlaktürk, F., Agasıev, A., Tataroğlu, A., Altındal, Ş. (2010). Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures. Gazi University Journal of Science, Volume: 20 Issue: 4. https://ajindex.com/articles/1270084

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