KaydedilenlerDerginizi ekleyin

Dergiler / Gazi University Journal of Science / 2007 / Cilt: 20 - Sayı: 4

Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures

Funda PARLAKTÜRK
Arif AGASIEV
Adem TATAROĞLU
Şemsettin ALTINDAL
Sayfa
97–102
Yayın Tarihi
2010-03-28
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The observations are comparable with the other values for BTO structures reported in the literature.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:The electrical properties of Au/Bi4Ti3O12/SnO2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/w-V measurements.
📊
Temel Bulgular & Veri:Dielectric constant(e'), dielectric loss(e'') and dielectric tangent(tand) were found as 170, 309 and 1,8 respectively at 50 kHz.
💡
Sonuç & Katkı:The observations are comparable with the other values for BTO structures reported in the literature.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Au/Bi4Ti3O12/SnO2 structures · Dielectric constant · Dielectric loss

Abstract

The electrical properties of Au/Bi4Ti3O12/SnO2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/w-V measurements. The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization. Dielectric constant(e'), dielectric loss(e'') and dielectric tangent(tand) were found as 170, 309 and 1,8 respectively at 50 kHz. C-V and G/w-V were measured in the frequency range of 1 kHz-5 MHz. It was found that dielectric constant(e') and dielectric loss(e'') systematically decrease with increasing frequency in 10 kHz-1 MHz frequency range and tand versus frequency plot exhibits a minimum at about 5 kHz. The ideality factor and series resistance were found to be 1,5 and 1030 W respectively from I-V measurements and series resistance was found as 350 W from the measured conductance in strong accumulation region. The observations are comparable with the other values for BTO structures reported in the literature.

🔖

Bu Makaleye Atıf Yap

PARLAKTÜRK, F., AGASIEV, A., TATAROĞLU, A., ALTINDAL, Ş. (2010). Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures. Gazi University Journal of Science, Cilt: 20 - Sayı: 4, 97–102. https://ajindex.com/articles/255602

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (16)

  1. Sze, S. M., “Physics of Semiconductor Devices 2nd ed.”, John Wiley & Sons, New York, 362-390 (1981)
  2. Cummins, S.E., “A new bistable ferroelectric light gate or display element”, Proc. IEEE, 55: 1537- 1538 (1967)
  3. Cummins, S. E., Cross L. E., "Crystal symmetry, optical properties, and ferroelectric polarization of Bi4Ti3O12 single crystals", Appl. Phys. Letters, 10: 14-16 (1967)
  4. Wu, S.Y., Takei, W.J., Francoma, M.H., “Transient switching response and partial switching phenomena in coarse-grained rhombohedral-phase PLZT ceramics”, Ferroelectrics, 10: 43-46 (1976)
  5. Agasiyev, A. A., Mamedov, M.Z., Muradov, M. B., “Electrical Conductivity and Dielectric Properties of Bi4Ti3O12”, J. Phys. III France, 6 (7): 853-861 (1996)
  6. B.H., Park, S. J., Hyun, “Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films”, Journal of Applied Physics, 84: 4428-4435 (1998)
  7. Joshi, P.C., Krupanidh, S.B., “Structural and electrical studies on rapid thermally processed ferroelectric Bi4Ti3O12 thin films by metalloorganic solution deposition”, Journal of Applied Physics, 72 (12): 5817-5819 (1992)
  8. Pintilie, L., Pintilie, I., Petre, D., Botila, T., Alexe M., “Trap characterization of Bi4Ti3O12 thin films by thermally stimulated currents”, Appl. Physica A, 69: 105-109 (1999)
  9. Fu, L., Liu, K., Zhang, B., Chu, J., “Capacitancevoltage characteristics of Bi4Ti3O12/p-Si interface”, Appl. Phys. Letters, 72 (14): 1784-1786 (1998)
  10. Norde, H., “A modified forward I-V plot for Schottky diodes with high series resistance”, Journal of Applied Physics, 50 (7): 5052-5053 (1979)
  11. Sato, K., Yasamura, Y., “Study of forward I-V plot for Schottky diodes with high series resistance”, J.Appl.Phys., 58 (9): 3655-3657 (1985)
  12. Bohlin, K.E., “Generalized Norde plot including determination of the ideality factor”, J.Appl.Phys., 60 (3): 1223-1224 (1986)
  13. Cheung, S.K., Cheung, N.W., “Extraction of Schottky diode parameters from forward currentvoltage characteristics”, Appl.Phys. Lett., 49 (2): 85-87 (1986)
  14. Green, M.A., King, F.D., Shewchun, J., “Minority Carrier MIS Tunnel Diodes and their Application to Electron and Photovoltaic Energy Conversion Part I: Theory”, Solid-State Electronics, 17: 551- 561 (1974)
  15. Özdemir, S., Altındal, Ş., “Temperature dependent electrical characteristics of Al-SiOx-pSi solar cells”, Solar Energy Materials and Solar Cells, 32 (2): 115-127 (1994)
  16. W. P.,