Dergiler / Gazi University Journal of Science / 2004 / Cilt: 17 - Sayı: 1

ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Sayfa
31–35
Yayın Tarihi
2010-08-11
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

Key Words: Hall mobility, dislocation scattering, Kubo formula

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism.
📊
Temel Bulgular & Veri:A good agreement has been obtained between the theory and the experiment.
💡
Sonuç & Katkı:Key Words: Hall mobility, dislocation scattering, Kubo formula
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Hall mobility · dislocation scattering · Kubo formula

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment. Key Words: Hall mobility, dislocation scattering, Kubo formula

🔖

Bu Makaleye Atıf Yap

KASAP, M., ACAR, S., ALKAN, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, Cilt: 17 - Sayı: 1, 31–35. https://ajindex.com/articles/255233

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...