Journals / Gazi University Journal of Science / 2004 / Cilt: 17 - Sayı: 1

ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Pages
31–35
Publication Date
2010-08-11
DOI
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AI Summary & Key Takeaways

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⚡ TL;DR(Too Long; Didn't Read)

Key Words: Hall mobility, dislocation scattering, Kubo formula

📌 3 Key Takeaways

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Objective & Hypothesis:To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism.
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Key Findings & Data:A good agreement has been obtained between the theory and the experiment.
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Conclusion & Impact:Key Words: Hall mobility, dislocation scattering, Kubo formula
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Hall mobility · dislocation scattering · Kubo formula

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment. Key Words: Hall mobility, dislocation scattering, Kubo formula

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Cite This Article

KASAP, M., ACAR, S., ALKAN, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, Cilt: 17 - Sayı: 1, 31–35. https://ajindex.com/articles/255233

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