SavedAdd your journal

Journals / Sakarya University Journal of Science / 2020 / Cilt: 24 Sayı: 5

Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Gülçin ERSÖZ DEMİR
İbrahim YÜCEDAĞ
Pages
1040–1052
Publication Date
2020-10-01
DOI
—
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Also the interfacial polarization can contribute more to the variation of the dielectric properties.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, we investigated the fabrication of Au/n-SiC (MS) and Au/Al2O3/n-SiC (MIS) type structures with atomic layer deposition (ALD) technique and their dielectric properties.
📊
Key Findings & Data:The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a (-3V)-(9V) bias voltage at 300 K.
💡
Conclusion & Impact:Also the interfacial polarization can contribute more to the variation of the dielectric properties.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Au/Al2O3/n-SiC (MIS) type structures · AC electrical conductivity · Dielectric Properties

Abstract

In this study, we investigated the fabrication of Au/n-SiC (MS) and Au/Al2O3/n-SiC (MIS) type structures with atomic layer deposition (ALD) technique and their dielectric properties. The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a (-3V)-(9V) bias voltage at 300 K. The significant dielectric parameters such as dielectric constant (ε') and dielectric loss (ε"), real and imaginary parts of electrical modulus (M' and M"), loss tangent (tan) were calculated by depending on frequency and voltage from capacitance-voltage (C-V) and conductance-voltage (G/-V) data. Thereby, the effect of frequency on MS and MIS was searched in detail. The effect of the interface states occurred in the low frequency region can be attributed to the variation of the characteristic behavior of these parameters. It is clear that the dielectric parameters highly depend on the frequency and voltage at depletion and accumulation regions. Moreover, the peak position of M shifts to the left side of the graphic due to the effect of the insulating layer. It can be deduced from the obtained results that the interfacial polarization is easier at low frequencies. Also the interfacial polarization can contribute more to the variation of the dielectric properties.

🔖

Cite This Article

DEMİR, G. E., YÜCEDAĞ, İ. (2020). Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures. Sakarya University Journal of Science, Cilt: 24 Sayı: 5, 1040–1052. https://ajindex.com/articles/941885

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (7)

  1. J. Zhang, G. Zhao, Y. Li, Y. Li, and W. Liu, “Effect of Al-Zr co-doping on the electrical properties of graphene/ZnO Schottky contact,” Materials Research Express, vol. 6, no. 12, pp. 125911, 2020.
  2. A. Demir, İ. Yücedağ, G. Ersöz, Ş. Altındal, N. Baraz, and M. Kandaz, “A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si and Au/Biphenylsubs-CoPc/n-Si Type Schottky Barrier Diodes,” Journal of Nanoelectronics and Optoelectronics, vol. 11, no. 5, pp. 620-625, 2016.
  3. Ç. S. Güçlü, A. F. Özdemir, A. Kökce, and Ş. Altındal, “Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature,” Acta Physica Polonica A, vol. 130, no. 1, pp. 325-330, 2016. N. Kumar and S. Chand, “Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes,” Journal of Alloys and Compounds, vol. 817, pp. 153294, 2020. S. M. Sze and K. K. Ng “Physics of semiconductor devices,” New York: John Wiley & Sons, 2006. E. H. Rhoderick and R. H. Williams, “Metal Semiconductor Contacts,” Oxford: Oxford University Press, 1988. E. H. Nicollian and J. R. Brews, “MOS (metal oxide semiconductor) physics and technology,” New York: John Wiley & Sons, 1982.
  4. Y. Zhou, M. Ogawa, X. Han, and K. Wang, “Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide,” Applied Physics Letters, vol. 93, no. 20, pp. 202105(1-3), 2008.
  5. S. Zheng, W. Yang, Q. Sun, L. Chen, P. Zhou, P. Wang, D. Zhang, and F. Xiao, “Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics,” Applied Physics Letters, vol. 103, no. 26, pp. 261602(1-4), 2013.
  6. Ç. G. Türk, S. O. Tan, Ş. Altındal, and B. İnem, “Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage,” Physica B: Condensed Matter, vol. 582, pp. 411979(1-8), 2020. A. Baradeswaran and A. E. Perumal, “Study on mechanical and wear properties of Al 7075/Al2O3/graphite hybrid composites,” Composites Part B: Engineering, vol. 56, pp. 464-471, 2014.
  7. M. W. Akhtar, Y. S. Lee, D. J. Yoo, and J. S. Kim, “Alumina-graphene hybrid filled epoxy composite: Quantitative validation and enhanced thermal conductivity,” Composites Part B: Engineering, vol. 131, pp. 184-195, 2017. S. Hlali