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Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2021 / Cilt: 11 - Sayı: 1

The Fabrication of Au/p-Si, Au/PVA/p-Si and Au/PVA:Gr/p-Si Schottky Barrier Diodes and The Investigation of Their Basic Electrical Properties

Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer Diyotların Üretimi ve Temel Elektriksel Özelliklerinin İncelenmesi

Gülçin ERSÖZ DEMİR
Pages
157–168
Publication Date
2021-03-01
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The Rs and ΦB0 values obtained by the Norde method were obtained as 362.39 and 0.70 eV for Au/p-Si, 175.07  and 0.75 eV for Au/PVA/p-Si, while it was found as 525.21 and 0.76 eV for Au/PVA:Gr/p-Si.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, three different types of Schottky Barrier diodes were fabricated: Metal-Semiconductor (Au/p-Si) diodes, and pure polyvinyl alcohol (PVA) interface (Au/PVA/p-Si) and 3% Graphene doped PVA interface (Au/PVA:Gr/p-Si) in order to investigate and develop the effect of polymer interface material on the electrical properties of diodes.
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Key Findings & Data:Basic electrical parameters of Au/p-Si, Au/PVA/p-Si, and Au/PVA:Gr/p-Si Schottky Barrier diodes such as series resistance (Rs), barrier height (ΦB0), interface state density (Nss) and ideality factor (n) was obtained from Termionic Emission (TE) theory by using current-voltage data.
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Conclusion & Impact:The Rs and ΦB0 values obtained by the Norde method were obtained as 362.39 and 0.70 eV for Au/p-Si, 175.07  and 0.75 eV for Au/PVA/p-Si, while it was found as 525.21 and 0.76 eV for Au/PVA:Gr/p-Si.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Akım-gerilim özellikleri · Arayüzey durum yoğunluğu · MPY Schottky Diyot

Abstract

In this study, three different types of Schottky Barrier diodes were fabricated: Metal-Semiconductor (Au/p-Si) diodes, and pure polyvinyl alcohol (PVA) interface (Au/PVA/p-Si) and 3% Graphene doped PVA interface (Au/PVA:Gr/p-Si) in order to investigate and develop the effect of polymer interface material on the electrical properties of diodes. The electrical properties of the prepared diodes besides the effect of PVA and PVA:Gr interfacial material was investigated. The current-voltage characteristics of each diodes were examined at room temperature. Basic electrical parameters of Au/p-Si, Au/PVA/p-Si, and Au/PVA:Gr/p-Si Schottky Barrier diodes such as series resistance (Rs), barrier height (ΦB0), interface state density (Nss) and ideality factor (n) was obtained from Termionic Emission (TE) theory by using current-voltage data. Norde method was also used to compare the Rs and ΦB0 parameters obtained by the Thermionic Emission theory. The values of n, Rs, and ΦB0 obtained by TE method were found as 14.46, 275.33 , and 0.66 eV for Au/p-Si, 4.98, 155.58 , and 0.72 eV for Au/PVA/p-Si, while it was calculated as 5.61, 432.43, and 0.77 eV for Au/PVA:Gr/p-Si, respectively. The Rs and ΦB0 values obtained by the Norde method were obtained as 362.39 and 0.70 eV for Au/p-Si, 175.07  and 0.75 eV for Au/PVA/p-Si, while it was found as 525.21 and 0.76 eV for Au/PVA:Gr/p-Si. Values found with Norde and Termionic Emission methods are compatible with each other. Experimental results show that the PVA:Gr interface provides an improvement in the electrical parameters of MPYs.

Özet

Bu çalışmada, Metal-Yarıiletken (Au/p-Si) diyotlar, polimer arayüzey malzemesinin diyotların elektriksel özellikleri üzerine etkisini araştırmak ve geliştirmek için; saf polivinil alkol (PVA) arayüzeyli (Au/PVA/p-Si) ve %3 Grafen katkılı PVA arayüzeyli (Au/PVA:Gr/p-Si) olmak üzere üç farklı tip Schottky Bariyer diyot üretildi. Hazırlanan diyotların elektriksel özelliklerinin yanı sıra PVA ve PVA:Gr arayüzey malzemesinin etkisi araştırıldı. Her bir diyotun akım-gerilim karakteristiği oda sıcaklığında incelendi. Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer diyotların seri direnç (Rs), bariyer yüksekliği (ΦB0), arayüz durum yoğunluğu (Nss) ve idealite faktörü (n) gibi temel elektriksel parametreleri akım-gerilim verileri kullanılarak Termiyonik Emisyon (TE) teorisinden elde edildi. Termiyonik Emisyon teorisi ile elde edilen Rs ve ΦB0 parametrelerini karşılaştırmak amacıyla Norde metodu da kullanıldı. TE teorisi ile elde edilen n, Rs ve ΦB0 değerleri, Au/p-Si için sırasıyla 14.46, 275.33 , 0.66 eV, Au/PVA/p-Si için 4.98, 155.58  ve 0.72 eV olarak bulunurken, Au/PVA:Gr/p-Si için ise sırasıyla 5.61, 432.43  ve 0.77 eV olarak hesaplandı. Norde metodu ile elde edilen Rs ve ΦB0 değerleri ise, Au/p-Si için 362.39 ve 0.70 eV, Au/PVA/p-Si için 175.07  ve 0.75 eV olarak elde edilirken, Au/PVA:Gr/p-Si için 525.21 ve 0.76 eV (PVA:Gr) olarak bulundu. Norde ve Termiyonik Emisyon teorisi yöntemleriyle bulunan değerler birbiri ile uyumludur. Deneysel sonuçlar, PVA:Gr arayüzeyinin MPY yapıların elektriksel parametrelerinde iyileştirme sağladığını göstermiştir.

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Cite This Article

DEMİR, G. E. (2021). The Fabrication of Au/p-Si, Au/PVA/p-Si and Au/PVA:Gr/p-Si Schottky Barrier Diodes and The Investigation of Their Basic Electrical Properties. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 11 - Sayı: 1, 157–168. https://ajindex.com/articles/256320

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