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Journals / Journal of Scientific Reports-A / 2023 / Sayı: 052

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

İrem ALP
Bilgehan Barış ÖNER
Esra EROĞLU
Pages
51–64
Publication Date
2023-03-29
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.

📌 3 Key Takeaways

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Objective & Hypothesis:In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated.
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Key Findings & Data:An optimization was held to increase internal quantum efficiency (IQE) handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices.
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Conclusion & Impact:In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:Deep-ultraviolet LED · UV-C LED · Quantum efficiency

Abstract

In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated. An optimization was held to increase internal quantum efficiency (IQE) handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation (nextnano). As a determining factor, IQE was obtained to be 24% for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70% by a low threading dislocation density (TDD) and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.

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Cite This Article

ALP, İ., ÖNER, B. B., EROĞLU, E. (2023). 285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN. Journal of Scientific Reports-A, Sayı: 052, 51–64. https://ajindex.com/articles/883322

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References (2)

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