Journals / Politeknik Dergisi / 2014 / Cilt: 17 Sayı: 4

The Effect of The Oxidation on GaAs Semiconductor Surface to the System Characteristics in A DoubleGapped Plasma Cell

Çift Gaz Boşalma Aralıklı Plazma Hücresinde GaAs Yarıiletken Yüzeyindeki Oksitlenmenin Sistem Karakteristiklerine Etkisi

Pages
161–165
Publication Date
2014-12-01
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The system characteristic in a double gap gas discharge plasma cell with GaAs cathode has been identified to be unstable due to the oxidation, experimentally.
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Key Findings & Data:The experimental studies include the system characteristics in a wide range of pressures (p = 28 – 342 Torr), interelectrode distances (d1 = 50 µm d2 = 50 – 320 µm) and semiconductor cathode diameter D (9 mm).
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Conclusion & Impact:Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined
🔬Design:Research Article
📍Scope:2000 Verileri
⚙️Variables:Gaz boşalması · GaAs · plazma

Abstract

The system characteristic in a double gap gas discharge plasma cell with GaAs cathode has been identified to be unstable due to the oxidation, experimentally. The experimental studies include the system characteristics in a wide range of pressures (p = 28 – 342 Torr), interelectrode distances (d1 = 50 µm d2 = 50 – 320 µm) and semiconductor cathode diameter D (9 mm). Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined

Özet

GaAs yarıiletken katotlu çift gaz boşalma aralıklı plazma hücresinde sistem karakteristiklerinin oksitlenme nedeniyle kararsızlık sergilediği deneysel olarak elde edilmiştir. Sistem karakteristikleri geniş bir gaz basıncı (p = 28 – 342 Torr), elektrotlar arası mesafe (d1 = 50 µm d2 = 50 – 320 µm) ve D = 9 mm lik yarıiletken katot çapı için deneysel olarak araştırıldı. U = 200-2000 Volt besleme gerilimi altında, Paschen eğrisinden kritik voltaj değerleri belirlendi.

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Cite This Article

KURT, H. Y., KALKAN, G., ÖZER, M., TANRIVERDİ, E., YİĞİT, D. (2014). The Effect of The Oxidation on GaAs Semiconductor Surface to the System Characteristics in A DoubleGapped Plasma Cell. Politeknik Dergisi, Cilt: 17 Sayı: 4, 161–165. https://ajindex.com/articles/697127

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