SavedAdd your journal

Journals / Hittite Journal of Science and Engineering / 2021 / Cilt: 8 - Sayı: 1

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Emre Gür
Mehmet Ertugrul
Soheil Mobtakeri
Merve Acar
Pages
1–5
Publication Date
2022-10-18
DOI
—
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility.
📊
Key Findings & Data:In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created.
💡
Conclusion & Impact:This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:2D materials · TMDC · WS2

Abstract

Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.

🔖

Cite This Article

Gür, E., Ertugrul, M., Mobtakeri, S., Acar, M. (2022). Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†. Hittite Journal of Science and Engineering, Cilt: 8 - Sayı: 1, 1–5. https://ajindex.com/articles/537917

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (4)

  1. Jariwala, D.; Marks, T. J.; Hersam, M. C., Mixed-dimensional vander Waals heterostructures. Nature materials 2017, 16 (2), 170-181.
  2. Liu, B. L.; Abbas, A.; Zhou, C. W., Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. Adv Electron Mater 2017, 3 (7). Shim, J.; Park, H. Y.; Kang, D. H.; Kim, J. O.; Jo, S. H.; Park, Y.; Park, J. H., Electronic and Optoelectronic Devices based on Two-Dimensional Materials: From Fabrication to Application. Adv Electron Mater 2017, 3 (4). Choi, W.; Choudhary, N.; Han, G. H.; Park, J.; Akinwande, D.; Lee, Y. H., Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today 2017, 20 (3), 116-130.
  3. Sumesh, C. K., Temperature dependant electronic charge transport characteristics at MX2 (M=Mo,W; X=S, Se)/Si heterojunction devices. J Mater Sci-Mater El 2019, 30 (4), 4117-4127.
  4. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S., Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature nanotechnology 2012, 7 (11), 699. Ahmed, S.; Yi, J., Two-dimensional transition metal dichalcogenides and their charge carrier mobilities in field-effect transistors. Nano-Micro Lett 2017, 9 (4), 50. Ye, M.; Zhang, D.; Yap, Y. K., Recent advances in electronic and optoelectronic devices based on two-dimensional transition metal dichalcogenides. Electronics 2017, 6 (2), 43. Dong, R.; Kuljanishvili, I., Progress in fabrication of transition metal dichalcogenides heterostructure systems. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2017, 35 (3), 030803. Gupta, P.; Rahman, A.; Subramanian, S.; Gupta, S.; Thamizhavel, A.; Orlova, T.; Rouvimov, S.; Vishwanath, S.; Protasenko, V.; Laskar, M. R., Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Sci Rep-Uk 2016, 6, 23708. Wang, J. W.; Li, Z. Q.; Chen, H. Y.; Deng, G. W.; Niu, X. B., Recent Advances in 2D Lateral Heterostructures. Nano-Micro Lett 2019, 11 (1). O'Regan, T. P.; Ruzmetov, D.; Neupane, M. R.; Burke, R. A.; Herzing, A. A.; Zhang, K.; Birdwell, A. G.; Taylor, D. E.; Byrd, E. F.; Walck, S. D., Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN. Appl Phys Lett 2017, 111 (5), 051602. Li, B.; Shi, G.; Lei, S.; He, Y.; Gao, W.; Gong, Y.; Ye, G.; Zhou, W.; Keyshar, K.; Hao, J., 3D band diagr