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Journals / Turkish Journal of Physics / 2010 / Cilt: 34 - Sayı: 2

Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) based Schottky diodes

İLKER AY
Hüseyin TOLUNAY
Pages
83–96
DOI
—
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⚡ TL;DR(Too Long; Didn't Read)

From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements.
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Key Findings & Data:From forward bias I-V measurements in the dark, the barrier height of samples (φ B0) , ideality factor (η) , modified Richardson constant (A∗ ) and series resistances (Rs ) have been obtained as the function of temperature for different nitrogen content.
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Conclusion & Impact:From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements. From forward bias I-V measurements in the dark, the barrier height of samples (φ B0) , ideality factor (η) , modified Richardson constant (A∗ ) and series resistances (Rs ) have been obtained as the function of temperature for different nitrogen content. In addition, forward and reverse bias current ratios ( If /Ir) at V = 1 volt have been investigated as the function of temperature for different nitrogen content. Light sensitivity of the samples has also been investigated under different light intensities at room temperature. From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.

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Cite This Article

AY, İ., TOLUNAY, H. (2010). Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) based Schottky diodes. Turkish Journal of Physics, Cilt: 34 - Sayı: 2, 83–96. https://ajindex.com/articles/378072

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References (16)

  1. H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori, Thin Solid Films, 479, (2004), 17
  2. I. Kobayashi, T. Ogawa and S. Hotta, Jpn. J. Appl. Phys., 31, (1992), 336
  3. J.C.Barbour,H.J.Stein,O.A.Popov,M.YoderandC.A.Outten, J. Vac. Sci. Technol., A9 (3), (1992), 480
  4. M. J. Powell, B. C. Easton, and O. F. Hill, Appl. Phys. Lett., 38, (1981), 794
  5. A. J. Lowe, M. J. Powell and S. R. Elliott, J. Appl. Phys., 59, (1986), 1251
  6. H. Matsuura, T. Okuno, H. Okushi, S. Yamasaki, A. Matsuda, N. Hata, et al. Jpn. J. Appl. Phys., 22, (1983), L197
  7. L. Magafas, N. Georgoulas and A. Thanailakis, Microelectronics Journal, 28, (1997), 107
  8. S.S.Georgiev,A.Toneva,D.Sueva, Solar Energy Materials & Solar Cells, 58, (1999), 387
  9. I. Ay and H. Tolunay, Solid-State Electronics, 51, (2007), 381
  10. D. Donoval, M. Barus and M. Zdimal, Solid-State Electronics, 34, (1991), 1365
  11. D. Donoval, V. Drobny and M. Luza, Solid-State Electronics, 42, (1998), 235
  12. S. M. Sze, Semiconductor Devices Physics and Technology, (John Wiley & Sons, New York. 1985), p. 93
  13. S. K Cheung and N. W. Cheung, Appl. Phys. Lett., 49, (1986), 85
  14. I. Ay and H. Tolunay, Solar Energy Materials & Solar Cell, 80, (2003), 209
  15. I. Ay and H. Tolunay, Turkish Journal of Physics, 25, (2001), 215
  16. R. Swanepoel, J.Phys.E:Sci.Instrum., 16, (1983), 1214.