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Dergiler / Turkish Journal of Physics / 2010 / Cilt: 34 - Sayı: 2

Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) based Schottky diodes

İLKER AY
Hüseyin TOLUNAY
Sayfa
83–96
DOI
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From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements.
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Temel Bulgular & Veri:From forward bias I-V measurements in the dark, the barrier height of samples (φ B0) , ideality factor (η) , modified Richardson constant (A∗ ) and series resistances (Rs ) have been obtained as the function of temperature for different nitrogen content.
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Sonuç & Katkı:From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri

Abstract

In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements. From forward bias I-V measurements in the dark, the barrier height of samples (φ B0) , ideality factor (η) , modified Richardson constant (A∗ ) and series resistances (Rs ) have been obtained as the function of temperature for different nitrogen content. In addition, forward and reverse bias current ratios ( If /Ir) at V = 1 volt have been investigated as the function of temperature for different nitrogen content. Light sensitivity of the samples has also been investigated under different light intensities at room temperature. From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.

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Bu Makaleye Atıf Yap

AY, İ., TOLUNAY, H. (2010). Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) based Schottky diodes. Turkish Journal of Physics, Cilt: 34 - Sayı: 2, 83–96. https://ajindex.com/articles/378072

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