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Journals / Mathematical and Computational Applications / 2005 / Cilt: 10 - Sayı: 1

Monte Carlo simulation for electron dynamics in semiconductor devices

MUSTAFA AKARSU
Ömer ÖZBAŞ
Pages
19–26
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Determination of mean electron velocity and energy is presented.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented.
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Key Findings & Data:The Monte Carlo method is briefly compared with alternative theoretical techniques.
💡
Conclusion & Impact:Determination of mean electron velocity and energy is presented.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented. The Monte Carlo method is briefly compared with alternative theoretical techniques. Flowchart of the simulation program is given and selections of free flight time, scattering mechanism and electron wave vector are explained. Determination of mean electron velocity and energy is presented.

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Cite This Article

AKARSU, M., ÖZBAŞ, Ö. (2005). Monte Carlo simulation for electron dynamics in semiconductor devices. Mathematical and Computational Applications, Cilt: 10 - Sayı: 1, 19–26. https://ajindex.com/articles/280112

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References (2)

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