KaydedilenlerDerginizi ekleyin

Dergiler / Mathematical and Computational Applications / 2005 / Cilt: 10 - Sayı: 1

Monte Carlo simulation for electron dynamics in semiconductor devices

MUSTAFA AKARSU
Ömer ÖZBAŞ
Sayfa
19–26
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

Determination of mean electron velocity and energy is presented.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented.
📊
Temel Bulgular & Veri:The Monte Carlo method is briefly compared with alternative theoretical techniques.
💡
Sonuç & Katkı:Determination of mean electron velocity and energy is presented.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri

Abstract

The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented. The Monte Carlo method is briefly compared with alternative theoretical techniques. Flowchart of the simulation program is given and selections of free flight time, scattering mechanism and electron wave vector are explained. Determination of mean electron velocity and energy is presented.

🔖

Bu Makaleye Atıf Yap

AKARSU, M., ÖZBAŞ, Ö. (2005). Monte Carlo simulation for electron dynamics in semiconductor devices. Mathematical and Computational Applications, Cilt: 10 - Sayı: 1, 19–26. https://ajindex.com/articles/280112

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (2)

  1. C. Jacoboni and L. Reggiani, The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials, Reviews of Modern Physics, 55 (3), 645-705, 1983. 2.T. Dosluoğlu and R. Solanki, The effect of InP buffer layer on the electron transport properties of epitaxial $In_{1-x}Ga_xAs$, Journal of Applied Physics, 69 (10), 7327-7329, 1991. 3.V. W. L. Chin, R. J. Egan, and T. L. Tansley, Carrier concentration and compensation ratio dependence of electron drift mobility in $InAs_{1-x}Sb_x$, Journal of Applied Physics, 72 (4),1410-1415, 1992. 4.H. Kosina, M. Nedjalkov, The Monte Carlo method for semi-classical charge transport in semiconductor devices, Mathematics and Computers in Simulations, 55, 93-102, 2001. 5.C. M. Snowden, Semiconductor Device Modelling, Peter Peregrinus Ltd., London, 1988. 6.Jacoboni C, and Lugli P., The Monte Carlo Method for Semiconductor Device Simulation, Springer-Verlag Wien New York, 1989. 7.Nag B.R., Electron Transport in Compound Semiconductors, Springer-Verlag, 1980. 8.William H. Press,
  2. Saul A. Teukolsky, William T. Vetterling, Brian P. Flannery, Numerical Recipes in Fortran 77, Published by the Press Syndicate of the University of Cambridge The Pitt Building, 1992. 9.M. Akarsu, Katılarda elektron dinamiği, M. Sc. Thesis, Department of Physics, Science Institute of Osmangazi University, Eskişehir, Turkey, 1997. 10.Rees, H. D., Calculation of distribution functions by exploting the stability of the steady state, Journal of Physical Ohemistry of Solids, 30, 643-655,1969. 11.K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices, Artech House, Norwood, 1993. 12.C. Moglestue, Monte Carlo Simulation of Semiconductor Devices, Chapman & HalI, 1993. 13.Lundstrom Mark, Fundamentals of Carrier Transport, Cambridge University Press, 2000. 14.Fawcett W., Boardmann A.D. and Swain S., Monte Carlo determination of electron transport properties in gallium arsenide, Journal of Physical Chemistry of Solids, 31, 1963-1990. 1970. 15.Ömer Özbaş, Mustafa Akarsu, Monte Carlo simulation of electron transport in InSb,Turkish journal of physics, 26, (4), 283-287, 2002. 16.M. Akarsu, Determination of transport properties in Hg doped CdTe semiconductor compound by Monte Carlo simulation, Ph. D. Thesis, Department of Physics, Science Institute of Osmangazi University, Eskişehir, Turkey, 2003.