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Journals / Bitlis Eren Üniversitesi Fen Bilimleri Dergisi / 2026 / Volume: 9 Issue: 3

The Analysis of Capacitance-Voltage and Conductance-Voltage Characteristics of Zr/p-Si Schottky diodes with a Native Oxide Interfacial Layer at High Frequencies

Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının Yüksek Frekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi

Durmuş Ali Aldemir(SÜLEYMAN DEMİREL ÜNİVERSİTESİ)0000-0003-4819-840X
Havva Elif Lapa(ısparta uygulamalı bilimler üniversitesi)0000-0002-5706-4641
Ahmet Faruk Özdemir(SÜLEYMAN DEMİREL ÜNİVERSİTESİ)0000-0001-9879-9209
Nazım Uçar(SÜLEYMAN DEMİREL ÜNİVERSİTESİ)0000-0002-0936-0382
Pages
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Publication Date
2020-09-26
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

According to the findings, the Zr/SiO2/p-Si Schottky diodes are promising for fast switching.

📌 3 Key Takeaways

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Objective & Hypothesis:Capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G-V-f) measurements of Zr/SiO2/p-Si Schottky diodes produced by thermal evaporation method were taken for frequencies (500 kHz- 3 MHz frequencies range) at room temperature.
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Key Findings & Data:The thickness of the interfacial oxide layer was calculated as 2.33 nm by means of C-V characteristic for 1 MHz frequency.
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Conclusion & Impact:According to the findings, the Zr/SiO2/p-Si Schottky diodes are promising for fast switching.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Schottky Diode · Silicon · Capacitance-conductance

Abstract

Capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G-V-f) measurements of Zr/SiO2/p-Si Schottky diodes produced by thermal evaporation method were taken for frequencies (500 kHz- 3 MHz frequencies range) at room temperature. The thickness of the interfacial oxide layer was calculated as 2.33 nm by means of C-V characteristic for 1 MHz frequency. The average value of series resistance was obtained as 70.5 Ω by using C and G values in the strong accumulation region. For these diodes, it was observed that the interfacial state density (Dit) calculated by the Hill-Coleman method decreased with increasing frequency. According to the findings, the Zr/SiO2/p-Si Schottky diodes are promising for fast switching.

Özet

Termal buharlaştırma yöntemiyle imal edilen Zr/SiO2/p-Si Schottky diyotların kapasite-gerilim-frekans (C-V-f) ve iletkenlik-gerilim-frekans (G-V-f) ölçümleri 500 kHz - 3 MHz aralığında 5 farklı frekansta ve oda sıcaklığında alınmıştır. 1 MHz frekans için C-V karakteristiği yardımıyla arayüzey oksit tabakasının kalınlığı 2.33 nm olarak hesaplanmıştır. Güçlü birikim bölgesindeki C ve G değerleri kullanılarak seri direncin ortalama değeri 70.5 Ω olarak elde edilmiştir. Bu diyotlar için, Hill-Coleman metodu ile hesaplanan arayüzey durum yoğunluğunun (Dit) artan frekansla azaldığı görülmüştür. Elde edilen bulgulara göre, Zr/SiO2/p-Si Schottky diyotları hızlı anahtarlama için umut vaat edicidir.

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Cite This Article

Aldemir, D. A., Lapa, H. E., Özdemir, A. F., Uçar, N. (2020). The Analysis of Capacitance-Voltage and Conductance-Voltage Characteristics of Zr/p-Si Schottky diodes with a Native Oxide Interfacial Layer at High Frequencies. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, Volume: 9 Issue: 3. https://doi.org/10.17798/bitlisfen.655179

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