Journals / Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2026 / Cilt: 28 Sayı: 1

Facile deposition of SnS2 thin films by ultrasonic spray pyrolysis method

Ultrasonik sprey piroliz yöntemi ile SnS2 ince filmlerin basit biriktirilmesi

Pages
146–157
Publication Date
2026-01-10
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The films were found to be of n-type conductivity through the hot probe method, and their resistivity was calculated to be 285 Ω·cm.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, SnS2 thin films were deposited onto glass substrates using the ultrasonic spray pyrolysis (USP) method.
📊
Key Findings & Data:Tin (IV) chloride pentahydrate (SnCl4.5H2O) was used as the tin precursor, and thiourea (CH4N2S) as the sulfur precursor.
💡
Conclusion & Impact:The films were found to be of n-type conductivity through the hot probe method, and their resistivity was calculated to be 285 Ω·cm.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:ultrasonik sprey piroliz · SnS2 ince filmler · kalay disülfür

Abstract

In this study, SnS2 thin films were deposited onto glass substrates using the ultrasonic spray pyrolysis (USP) method. Tin (IV) chloride pentahydrate (SnCl4.5H2O) was used as the tin precursor, and thiourea (CH4N2S) as the sulfur precursor. The structural, morphological, electrical, and electro-optical characterizations of the films were performed. Using the Tauc method, the direct and indirect bant gaps of the SnS2 thin films were determined to be 2.35 eV and 2.10 eV, respectively. The films were found to be of n-type conductivity through the hot probe method, and their resistivity was calculated to be 285 Ω·cm.

Özet

Bu çalışmada SnS2 ince filmler cam alttaşlar üzerine ultrasonik sprey piroliz yöntemi (USP) ile biriktirildi. Kalay öncüsü olarak kalay (IV) klorür pentahidrat (SnCl4.5H2O) ve sülfür öncüsü olarak da tiyoüre (CH4N2S) kullanıldı. Filmlerin yapısal, morfolojik, elektriksel ve elektro-optik karakterizasyonları gerçekleştirildi. Tauc metodu yardımıyla SnS2 ince filmler için doğrudan ve dolaylı bant aralıkları sırasıyla 2.35 eV ve 2.10 eV olarak belirlendi. Sıcak prob yöntemi ile filmlerin n-tipi olduğu tespit edildi ve özdirenci 285 cm hesaplandı.

🔖

Cite This Article

Aldemir, D. A., Kader, Z. (2026). Facile deposition of SnS2 thin films by ultrasonic spray pyrolysis method. Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 28 Sayı: 1, 146–157. https://doi.org/10.25092/baunfbed.1672478

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (41)

  1. Iguchi, Y., Sato, K., Inoue, K., Fukui, K. and Yanagi, H., Br-doped n-type SnS single crystals with carrier concentrations suitable for homojunction solar cells, Solid State Sciences, 140, 107206, (2023).
  2. Burton, L. A., Colombara, D., Abellon, R. D., Grozema, F. C., Peter, L. M., Savenije, T. J., Dennler, G. and Walsh, A., Synthesis, characterization, and electronic structure of single-crystal SnS, Sn2S3, and SnS2, Chemistry of Materials, 25, 4908–4916, (2013).
  3. Andrade-Arvizu, J. A., Courel-Piedrahita, M. and Vigil-Galán, O., SnS-based thin film solar cells: perspectives over the last 25 years, Journal of Materials Science: Materials in Electronics, 26, 4541–4556, (2015).
  4. Isik, M., Gullu, H. H., Terlemezoglu, M., Surucu, O. B., Parlak, M. and Gasanly, N. M., Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering, Physica B: Condensed Matter, 591, 412264, (2020).
  5. Ye, G., Gong, Y., Lei, S., He, Y., Li, B., Zhang, X., Jin, Z., Dong, L., Lou, J., Vajtai, R., Zhou, W. and Ajayan, P. M., Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition, Nano Research, 10, 2386–2394, (2017).
  6. Cho, J. Y., Kim, S. Y., Nandi, R., Jang, J., Yun, H. S., Enkhbayar, E., Kim, J. H., Lee, D. K., Chung, C. H., Kim, J. H. and Heo, J., Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality, Journal of Materials Chemistry A, 8, 20658–20665, (2020).
  7. Gao, J., Yang, H., Mao, H., Liu, T., Zheng, Y., Wang, Y., Xiang, D., Han, C. and Chen, W., Out-of-plane homojunction enabled high performance SnS2 lateral phototransistor, Advanced Optical Materials, 8, (2020).
  8. Shin, D., Yang, J., Mukherjee, S., Bahrami, A., Lehmann, S., Nasiri, N., Krahl, F., Pang, C., Wrzesińska-Lashkova, A., Vaynzof, Y., Wohlrab, S., Popov, A. and Nielsch, K., SnS2 thin film with in situ and controllable Sb doping via atomic layer deposition for optoelectronic applications, Advanced Materials Technologies, 9, 2302049, (2024).
  9. Chu, H., Zhang, F., Pei, L., Cui, Z., Shen, J. and Ye, M., Ni, Co and Mn doped SnS2-graphene aerogels for supercapacitors, Journal of Alloys and Compounds, 767, 583–591, (2018).
  10. Yan, W., Lv, C., Zhang, D., Chen, Y., Zhang, L., Ó Coileáin, C., Wang, Z., Jiang, Z., Hung, K. M., Chang, C. R. and Wu, H. C., Enhanced NO2 sensitivity in Schottky-contacted n-type SnS2 gas sensors, ACS Applied Materials & Interfaces, 12, 26746–26754, (2020).
  11. Louhichi, M., Souissi, R., Alaya, A., Toumi, M., Tiss, B., Amara, A. B. H., Bouguila, N. and Alaya, S., Spray-pyrolyzed tin disulfide (SnS2) thin film: a promising approach for both visible and UV detection applications, Journal of Electronic Materials, 54, 5709–5722, (2025).
  12. Hadef, Z., Kamli, K., Kamli, O. and Labiod, S., Effect of substrate temperature on physical properties of Co doped SnS2 thin films deposited by ultrasonic spray pyrolysis, Chalcogenide Letters, 20, 587–597, (2023).
  13. Sankapal, B. R., Mane, R. S. and Lokhande, C. D., Successive ionic layer adsorption and reaction (SILAR) method for the deposition of large area (approximately 10 cm2) tin disulfide (SnS2) thin films, Materials Research Bulletin, 35, 2027–2035, (2000).
  14. Gümüş, C. and Altındemir, G., N-tipi SnS2 yarıiletken ince filmlerin hazırlanması ve karakterizasyonu, Çukurova Üniversitesi Mühendislik-Mimarlık Fakültesi Dergisi, 31, 83–92, (2016).
  15. Voznyi, A., Kosyak, V., Opanasyuk, A., Tirkusova, N., Grase, L., Medvids, A. and Mezinskis, G., Structural and electrical properties of SnS2 thin films, Materials Chemistry and Physics, 173, 52–61, (2016).
  16. Chaki, S. H., Joshi, H. J., Tailor, J. P. and Deshpande, M. P., Study of SnS2 thin film deposited by spin coating technique, Materials Research Express, 4, 076402, (2017).
  17. Amroun, M. N. and Khadraoui, M., Effect of substrate temperature on the properties of SnS2 thin films, Optik, 184, 16–27, (2019).
  18. Lang, R. J., Ultrasonic atomization of liquids, The Journal of the Acoustical Society of America, 34, 6–8, (1962).
  19. Şen, E., Kaleli, M., Aldemir, D. A. and Lapa, H. E., Investigation of MASnIxBr3−x (x = 3, 2, 1, 0) perovskite thin films produced by ultrasonic spray pyrolysis method, Arabian Journal for Science and Engineering, 49, 10085–10094, (2024).
  20. Jaber, A. Y., Alamri, S. N. and Aida, M. S., SnS2 thin film deposition by spray pyrolysis, Japanese Journal of Applied Physics, 51, 065801, (2012).
  21. Kaawash, N. M. S., Kejriwal, N., Halge, D. I., Narwade, V. N., Rana, A. S., Dadge, J. W., Jejurikar, S. M., Alegaonkar, P. S. and Bogle, K. A., Highly stable and sensitive photon detection performance of ZnO thin film for ultraviolet light, Physica B: Condensed Matter, 639, 413905, (2022).
  22. Panneerselvam, P., Murugadoss, V., Kim, T. G. and Angaiah, S., Preparation of compact TiO2 thin film by artist spray gun-assisted pyrolysis method for lead-free perovskite solar cell, Journal of Materials Science: Materials in Electronics, 32, 10412–10423, (2021).
  23. Wang, H., Yu, B., Jiang, S., Jiang, L. and Qian, L., UV/ozone-assisted tribochemistry-induced nanofabrication on Si(100) surfaces, RSC Advances, 7, 39651–39656, (2017).
  24. Ossila, UV ozone cleaning: theory and application, https://www.ossila.com/pages/uv-ozone-theory?_pos=3&_sid=d129be9c1&_ss=r (Erişim Tarihi: 25.07.2025).
  25. Timoumi, A., Alzahrani, R. and Alsherif, G., Growth and transparent substrates effect on Sn2S3 thin films obtained via physical solid interactions, Journal of Materials Science: Materials in Electronics, 34, 1–10, (2023).
  26. Price, L. S., Parkin, I. P., Hardy, A. M. E., Clark, R. J. H., Hibbert, T. G. and Molloy, K. C., Atmospheric pressure chemical vapor deposition of tin sulfides (SnS, Sn2S3, and SnS2) on glass, Chemistry of Materials, 11, 1792–1799, (1999).
  27. Zhang, Y. C., Du, Z. N., Li, S. Y. and Zhang, M., Novel synthesis and high visible light photocatalytic activity of SnS2 nanoflakes from SnCl2·2H2O and S powders, Applied Catalysis B: Environmental, 95, 153–159, (2010).
  28. Baltakesmez, A., Electrical characterization and solar light sensitivity of SnS2/n-Si junction, Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 10, 214–224, (2020).
  29. Anitha, N., Anitha, M., Raj Mohamed, J., Valanarasu, S. and Amalraj, L., Influence of substrate temperature on the physical properties of SnS2 thin films prepared using nebulized spray pyrolysis technique, Journal of Materials Science: Materials in Electronics, 29, 11529–11539, (2018).
  30. Nebatti Ech-Chergui, A., Ghediya, P. R., Khane, Y., Guezzoul, M., Popa, A., Kadari, A. S., Adjdir, M., Kesavan, K., Lockwood, D. J., Khodja, K. D., Amrani, B., Zekri, A. and Aïssa, B., Spray coated of newly La-doped SnS2 thin films for photocatalytic degradation application, Physica B: Condensed Matter, 667, 415206, (2023).
  31. Hadef, Z., Kamli, K., Zaidi, B., Boulkhessaim, S. and Chouial, B., Study of substrate temperatures effects on the properties of ultrasonically sprayed SnS2 thin films, Journal of Nano Research, 77, 105–118, (2023).
  32. Kumar, S. S., Valanarasu, S., Isaac, R. S. R., Juliet, A. V., Ganesh, V. and Yahia, I. S., Improve the photodetector properties of SnS thin films via nebulizer spray pyrolysis (NSP) technique for UV sensor applications, Journal of Alloys and Compounds, 1019, 179275, (2025).
  33. Ren, Y., Shi, Q. and Zhang, G., Lithium storage properties of TiC-modified SnS2 nanosheets, ChemElectroChem, 9, e202101567, (2022).
  34. Liu, Y., Liu, Y., Luo, G., Zhu, W., Li, N., Song, Y., Song, H., Shan, Y., Wu, Q., Ding, Y., Liang, A. and Liu, L., Photothermally inducing SnS2 phase transition in Cu2O@CuS@SnS2 core–shell heterostructure to trigger efficient photocatalytic CO2 reduction, Chemical Engineering Journal, 510, 161537, (2025).
  35. Asif, O. and Rastogi, A. C., Tin disulfide-oxide (SnS2−xOx) as n-type heterojunction layer processed by chemical bath technique for Cd free fabrication of compound semiconductor thin film solar cells, MRS Advances, 3, 3301–3306, (2018).
  36. El Mendili, Y., Vaitkus, A., Merkys, A., Gražulis, S., Chateigner, D., Mathevet, F., Gascoin, S., Petit, S., Bardeau, J.-F., Zanatta, M., Secchi, M., Mariotto, G., Kumar, A., Cassetta, M., Lutterotti, L., Borovin, E., Orberger, B., Simon, P., Hehlen, B. and Le Guen, M., Raman Open Database: first interconnected Raman–X-ray diffraction open-access resource for material identification, Journal of Applied Crystallography, 52, 618–625, (2019).
  37. Tauc, J., Grigorovici, R. and Vancu, A., Optical properties and electronic structure of amorphous germanium, Physica Status Solidi, 15, 627–637, (1966).
  38. Priyadarshini, P., Das, S., Alagarasan, D., Ganesan, R., Varadharajaperumal, S. and Naik, R., Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing, Scientific Reports, 11, 1–14, (2021).
  39. Lokhande, C. D., A chemical method for tin disulphide thin film deposition, Journal of Physics D: Applied Physics, 23, 1703–1705, (1990).
  40. Nozaki, H. and Imai, I., Indirect absorption of SnS2, Physica B+C, 105, 74–77, (1981).
  41. Schroder, D. K., Semiconductor Material and Device Characterization, 3rd Ed., John Wiley & Sons, New Jersey, (2015).