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Journals / Afyon Kocatepe Üniversitesi Fen ve Mühendislik Bilimleri Dergisi / 2023 / Cilt: 23 Sayı: 6

Investigation of the Effect of Graphene/Graphite Doping at the Interface on the Electrical Properties of Au/n-6H SiC/Au Schottky Barrier Diode

Ara Yüzeyine Grafen/Grafit katkılamanın Au/n-6H SiC/Au Schottky Bariyer Diyotunun Elektriksel Özelliklerine Etkisinin Araştırılması

Ercan Erdoğdu(Gazi Üniversitesi)0000-0003-0926-0821
M. Mahir Bülbül(GAZİ ÜNİVERSİTESİ, FEN FAKÜLTESİ)0000-0003-0555-0637
Murat Ulusoy(GAZİ ÜNİVERSİTESİ, FEN FAKÜLTESİ)0000-0001-9842-0318
Pages
1381–1390
Publication Date
2023-12-28
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

As a result of the study, it was observed that graphene had a positive effect at the point of improving the dielectric properties of the Au/n-6H SiC/Au semiconductor structure, and graphite had a positive effect at the point of improving the electrical properties

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The Au/n-6H SiC/Au structure and the graphite and graphene doped states at the interface of this sample were examined at 300 K temperature.
📊
Key Findings & Data:Some basic electrical parameters were calculated using current-voltage (I-V) measurements both in the dark and under light (100 mW/cm², 300-1800 nm, AM 1.5G standard) and capacitance-voltage (C-V) measurements in the dark at different frequencies.
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Conclusion & Impact:As a result of the study, it was observed that graphene had a positive effect at the point of improving the dielectric properties of the Au/n-6H SiC/Au semiconductor structure, and graphite had a positive effect at the point of improving the electrical properties
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:Schottky Bariyer Diyot · Grafen · Grafit

Abstract

The Au/n-6H SiC/Au structure and the graphite and graphene doped states at the interface of this sample were examined at 300 K temperature. Raman, Scanning electron microscopy (SEM) and Energy distribution spectroscopy (EDS) structure analyzes were performed for all three samples. Some basic electrical parameters were calculated using current-voltage (I-V) measurements both in the dark and under light (100 mW/cm², 300-1800 nm, AM 1.5G standard) and capacitance-voltage (C-V) measurements in the dark at different frequencies. As a result of the study, it was observed that graphene had a positive effect at the point of improving the dielectric properties of the Au/n-6H SiC/Au semiconductor structure, and graphite had a positive effect at the point of improving the electrical properties

Özet

Au/n-6H SiC/Au yapısı ve ara yüzeyine grafit ve grafen katkılı durumları 300 K sıcaklıkta incelendi. Her üç numune için Raman, Taramalı elektron mikroskobu (SEM) ve Enerji dağılım spektroskopisi (EDS) yapı analizleri yapıldı. Hem karanlıkta hem de ışık altında (100 mW/cm², 300-1800 nm, AM 1,5G standartı) akım-voltaj (I-V) ölçümleri ve değişik frekanslarda karanlıkta kapasitans-voltaj (C-V) ölçümleri kullanılarak temel bazı elektriksel parametreleri hesaplandı. Yapılan çalışma sonucunda Au/n-6H SiC/Au yarıiletken yapısının dielektrik özelliklerini iyileştirme noktasında grafen’in, elektriksel özelliklerini iyileştirme noktasında grafitin olumlu etki yaptığı gözlemlenmiştir

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Cite This Article

Erdoğdu, E., Bülbül, M. M., Ulusoy, M. (2023). Investigation of the Effect of Graphene/Graphite Doping at the Interface on the Electrical Properties of Au/n-6H SiC/Au Schottky Barrier Diode. Afyon Kocatepe Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, Cilt: 23 Sayı: 6, 1381–1390. https://doi.org/10.35414/akufemubid.1307415

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