Dergiler / Turkish Journal of Electrical Engineering and Computer Science / 2006 / Cilt: 14 - Sayı: 3
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
- Sayfa
- 429–436
- DOI
- —
Özet
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.
Abstract
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.