SavedAdd your journal

Journals / Turkish Journal of Electrical Engineering and Computer Science / 2006 / Cilt: 14 - Sayı: 3

The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors

Serkan TOPALOĞLU,Jörn DRIESEN,Werner PROST

Pages
429–436
DOI
—

Abstract

High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.

Özet

High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.

Keywords: Turk. J. Elec. Eng. & Comp. Sci., 14, (2006), 429-436. Full text: pdf Other articles published in the same issue: Turk. J. Elec. Eng. & Comp. Sci., vol.14, iss.3.