As a result of the annealing of the same Al-doped samples at 560 degrees for 1 hour, the band gap was measured as approximately 2.18 eV, and at the same time, it was observed that in the XRD analyzes of the samples, peaks of various intensities occurred, with the most intense peak at 33.47 degrees.
📌 3 Maddede Bu Makale
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Amaç & Hipotez:In this study, the structural and optical properties of the aluminum doped F2O3 thin film were investigated.
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Temel Bulgular & Veri:XRD analyzes and absorption measurements were taken before and after annealing of Fe2O3:Al film grown by FR Magnetron Sputtering method.
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Sonuç & Katkı:As a result of the annealing of the same Al-doped samples at 560 degrees for 1 hour, the band gap was measured as approximately 2.18 eV, and at the same time, it was observed that in the XRD analyzes of the samples, peaks of various intensities occurred, with the most intense peak at 33.47 degrees.
In this study, the structural and optical properties of the aluminum doped F2O3 thin film were investigated. XRD analyzes and absorption measurements were taken before and after annealing of Fe2O3:Al film grown by FR Magnetron Sputtering method. The band gap energy ranges of the samples we obtained are about 1.87 eV before annealing, and XRD peaks were not observed in XRD analyses. As a result of the annealing of the same Al-doped samples at 560 degrees for 1 hour, the band gap was measured as approximately 2.18 eV, and at the same time, it was observed that in the XRD analyzes of the samples, peaks of various intensities occurred, with the most intense peak at 33.47 degrees.
Turgut, E. (2021). THE EFFECT OF ANNEALING TEMPERATURE ON AL DOPED FE2O3 THIN FILMS GROWN BY SPUTTERING TECHNIQUE. The World of Biomedical Technology, Cilt: 1 Sayı: 1, 8–10. https://ajindex.com/articles/978204
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Cho, T. S., Yi, M. S., Noh, D. Y., Doh, S. J., & Je, J. H. (2007). Thickness dependence of the crystallization of α-Fe2O3/α-Al2O3 (0001) thin films grown by sputtering. In Solid State Phenomena (Vol. 124, pp. 1213-1216). Trans Tech Publications Ltd.
Doh, S. J., Je, J. H., & Cho, T. S. (2002). Role of interfacial crystallites in the crystallization of α-Fe2O3/α-Al2O3 (0 0 0 1) thin films. Journal of crystal growth, 240(3-4), 355-362.
Saritas, S., Kundakci, M., Coban, O., Tuzemen, S., & Yildirim, M. (2018). Ni: Fe2O3, Mg: Fe2O3 and Fe2O3 thin films gas sensor application. Physica B: Condensed Matter, 541, 14-18.