Dielectric constant (ε^'), dielectric loss (ε^''), dielectric loss tangent (tanδ), the ac electrical conductivity (σ_ac), and complex impedance (Z^*) were calculated from the C-V and G /ω -V characteristics and plotted as a function of frequency.
📌 3 Maddede Bu Makale
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Amaç & Hipotez:In this study, voltage and frequency dependent dielectric properties of Au/n-CdTe Schottky diodes grown by thermal evaporation method were investigated.
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Temel Bulgular & Veri:The frequency and voltage dependent of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range of 1 kHz - 500 kHz at room temperature.
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Sonuç & Katkı:Dielectric constant (ε^'), dielectric loss (ε^''), dielectric loss tangent (tanδ), the ac electrical conductivity (σ_ac), and complex impedance (Z^*) were calculated from the C-V and G /ω -V characteristics and plotted as a function of frequency.
In this study, voltage and frequency dependent dielectric properties of Au/n-CdTe Schottky diodes grown by thermal evaporation method were investigated. The frequency and voltage dependent of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range of 1 kHz - 500 kHz at room temperature. Dielectric constant (ε^'), dielectric loss (ε^''), dielectric loss tangent (tanδ), the ac electrical conductivity (σ_ac), and complex impedance (Z^*) were calculated from the C-V and G /ω -V characteristics and plotted as a function of frequency.
ÇAVUŞ, H. K., ÇAVUŞ, M., İLDEŞ, C., BÜYÜKAKKAŞ, S., ŞAHİNGÖZ, R. (2023). Voltage and Frequency Dependence Dielectric Properties of Au/n-CdTe Schottky Diodes. Bozok Journal of Science, Cilt: 1 Sayı: 1, 1–10. https://ajindex.com/articles/976521
A. Gukasyan, A. Kvit, and Y. Klevkov, “High-Resolution PL Characterization of Impurity Segregation and Their Complex Formation on Extended Defects in CdTe,” Solid State Com., vol. 97, no. 10, pp. 897–902, Mar. 1996, doi: 10.1016/0038-1098(95)00417-3.
S. Lalitha, S. Zh. Karazhanov, P. Ravindran, and S. Senthilarasu, “Electronic Structure, Structural and Optical Properties of Thermally Evaporated CdTe Thin Films,” Physica B., vol. 387, no. 1–2, pp. 227–238, Jan. 2007, doi: 10.1016/j.physb.2006.04.008. A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, and J. Piqueras, “Compensation and Deep Levels in II–VI Compounds,” Mater. Sci. Eng. B., vol. 42, no.1–3, pp. 302–305, Dec. 1996, doi: 10.1016/S0921-5107(96)01726-6.
X. Yi, O. Lin, X. Zhao, and K. Wong,” The Effect of Surface Preparation on Properties of Cadmium Telluride Thin Film Heterojunctions,” J. Phys. D Appl. Phys., vol. 23, no. 7, pp. 912, July 1990, doi: 10.1088/0022-3727/23/7/025. K. Guergouri, M. S. Ferah, R. Triboulet, and Y. Marfaing, “Study of the Crystalline Quality of CdTe, CdZnTe and CdMnTe Substrates Used for Liquid Phase Epitaxy of Cd0.7Hg0.3Te,” J. Cryst. Growth, vol. 139, no. 1–2, pp. 6–14, May 1994, doi: 10.1016/0022-0248(94)90022-1.
A. Romeo, G. Khrypunov, S. Galassini, H. Zogg, and A. N. Tiwari, “Bifacial Configurations for CdTe Solar Cells,” Solar Energy Mater. Solar Cells, vol. 91, no. 15–16, pp. 1388–1391, Sep. 2007, doi: 10.1016/j.solmat.2007.03.010. Z. R. Khan, M. Zulfequar, and M. S. Khan, “Structural, Optical, Otoluminescence, Dielectric and Electrical Studies of Vacuum-Evaporated CdTe Thin Films,” Bull. Mater. Sci., vol. 35, no. 2, pp. 169–174, Apr. 2012, doi: 10.1007/s12034-012-0274-x. H. Kanbur, Ş. Altindal, T. Mammadov, and Y. Şafak, “Effects of Illumination on I-V, C-V and G/ω –V Characteristics of Au/n-CdTe Schottky Barrier Diodes,” J. Optoelectron. Adv. M., vol. 13, no. 6, pp. 713–718, June 2011.
M. S. Han, T. W. Kang, J. H. Leem, M. H. Lee, K. J. Kim, and T. W. Kim, “Strain Effects in CdTe/Si Heterostructures,” J. Appl. Phys., vol. 82, no. pp. 6012, June 1998, doi: 10.1063/1.366467. S. Surabhi, K. Anurag, and S. R. Kumar, “Effect of Annealing on the Structural, Compositional and Optical Properties of CdTe Films,” Mater. Today: Proc., vol. 45, no. 6, pp. 4477–4482, Feb. 2021, doi: 10.1016/j.matpr.2020.12.988. H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, “CdTe(111) Growth on Misoriented Si(100) Substrates by Hot-Wall Epitaxy,” J. Cryst. Growth, vo