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AI InsightWe have obtained a barrier height temperature coefficient value of a = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.
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Özet
We have formed the ideal Co/n-GaAs Schottky barrier diodes (SBDs) by magnetron DC sputtering. The experimental current-voltage data of the Co/n-GaAs SBD are almost independent of the sample temperature and quite well obey the thermionic emission model from 100 K to 320 K. We have showed that the temperature coefficient of the barrier height can be determined using Norde's method instead of the temperature-dependent capacitance-voltage measurements or the flat-band barrier height values because the thermionic emission current dominates in the ideal SBDs. We have obtained a barrier height temperature coefficient value of a = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.
Abstract
We have formed the ideal Co/n-GaAs Schottky barrier diodes (SBDs) by magnetron DC sputtering. The experimental current-voltage data of the Co/n-GaAs SBD are almost independent of the sample temperature and quite well obey the thermionic emission model from 100 K to 320 K. We have showed that the temperature coefficient of the barrier height can be determined using Norde's method instead of the temperature-dependent capacitance-voltage measurements or the flat-band barrier height values because the thermionic emission current dominates in the ideal SBDs. We have obtained a barrier height temperature coefficient value of a = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.