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Dergiler / Gazi University Journal of Science / 2022 / Cilt: 35 - Sayı: 1

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

İzel PERKITEL
İsmail ALTUNTAŞ
İlkay DEMİR
Sayfa
281–285
Yayın Tarihi
2022-11-08
DOI
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Besides, surface cleaning of Si (111) substrate by the RCA method has reduced the FWHM value ~5% for ω-2θ scan and ~60% for ω scan of AlN epilayer, indicating an improvement in crystal quality.

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Amaç & Hipotez:In this work, the effect of Si (111) substrate surface cleaning by RCA (Radio Corporation of America) method on growth rate and crystalline quality of epitaxially grown AlN thin films by MOVPE (Metal Organic Vapor Phase Epitaxy) technique is investigated.
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Temel Bulgular & Veri:In situ reflectance system and high resolution X-ray diffraction (HRXRD) technique are used for the analysis of growth rate and crystal quality of epitaxial AlN layers, respectively.
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Sonuç & Katkı:Besides, surface cleaning of Si (111) substrate by the RCA method has reduced the FWHM value ~5% for ω-2θ scan and ~60% for ω scan of AlN epilayer, indicating an improvement in crystal quality.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:RCA · Epitaxial AlN · MOVPE

Abstract

In this work, the effect of Si (111) substrate surface cleaning by RCA (Radio Corporation of America) method on growth rate and crystalline quality of epitaxially grown AlN thin films by MOVPE (Metal Organic Vapor Phase Epitaxy) technique is investigated. In situ reflectance system and high resolution X-ray diffraction (HRXRD) technique are used for the analysis of growth rate and crystal quality of epitaxial AlN layers, respectively. Also, The Raman measurement is done to show the effect of the RCA cleaning procedure on the position of the peaks that occurred in the Raman spectra. The results have shown that the surface cleaning of Si (111) substrate by the RCA method removes the oxide layer formed on the surface, also helps to decrease the parasitic reactions and increases the adatom efficiency, results in an increased growth rate of the AlN layer. Besides, surface cleaning of Si (111) substrate by the RCA method has reduced the FWHM value ~5% for ω-2θ scan and ~60% for ω scan of AlN epilayer, indicating an improvement in crystal quality.

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Bu Makaleye Atıf Yap

PERKITEL, İ., ALTUNTAŞ, İ., DEMİR, İ. (2022). The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN. Gazi University Journal of Science, Cilt: 35 - Sayı: 1, 281–285. https://ajindex.com/articles/650864

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Kaynakça (11)

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