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Dergiler / Istanbul University Journal of Electrical and Electronics Engineering / 2002 / Cilt: 2 - Sayı: 2

A study to improve symmetrical CMOS OTA behaviour in subthreshold region

Hakan KUNTMAN
Gürsel DÜZENLİ
Sayfa
527–535
Yayın Tarihi
2022-10-18
DOI
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The result is proven by SPICE simulations and by measurements.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region.
📊
Temel Bulgular & Veri:In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA.
💡
Sonuç & Katkı:The result is proven by SPICE simulations and by measurements.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri

Abstract

The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region. In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA. The result is proven by SPICE simulations and by measurements.

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Bu Makaleye Atıf Yap

KUNTMAN, H., DÜZENLİ, G. (2022). A study to improve symmetrical CMOS OTA behaviour in subthreshold region. Istanbul University Journal of Electrical and Electronics Engineering, Cilt: 2 - Sayı: 2, 527–535. https://ajindex.com/articles/543924

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Kaynakça (7)

  1. Düzenli, G., Kılıç,Y. Kuntman, H. and Ataman, A., “On the design of low-frequency filters using CMOS OTAs operating in the subthreshold region”, Microelectronics Journal, Vol. 30/1, pp. 45-54, Dec. 1998
  2. Düzenli, G., “Eşikaltında çalışan CMOS OTA’ların iyilestirilmesi ve tıp elektroniği alanına uygulanması”, M.Sc. Thesis, Technical University of Istanbul, Institute of Science and Technology, 1996
  3. Kılıç, Y., “Eşikaltında çalışan CMOS OTA-C süzgeçlerinin tümdevre gerçekleşmesi”, M.Sc. Thesis, Yıldız Technical University, Institute of Science and Technology, 1996. 4] Grottjohn, T. and Hoefflinger, B., “A parametric short-channel MOS transistor model for subthreshold and strong inversion current”, IEEE Tran. on Elec. D., vol. ED-31, pp. 234-246, 1984
  4. Sheu, B.J., Scharfetter, D.L., Ko, P.K. and Jeng, M. Ch, “BSIM: Berkeley short-channel IGFET model for MOS transistors”, IEEE Journal of Solid-State Circuits, vol. SC-22, 4, pp. 558-564, 1987
  5. Godfrey, M. D., “Device modeling for subthreshold circuits, IEEE Transactions on Circuits and Systems”, vol.39, 8, pp. 532-539, 1992
  6. Foty, D., “MOSFET modeling with SPICE”, Chapter 6, 1997
  7. Antognetti, P. and Massobrio, G., “Semiconductor device modeling with SPICE”, Chapter 3-4, 1988.