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Journals / Istanbul University Journal of Electrical and Electronics Engineering / 2002 / Cilt: 2 - Sayı: 2

A study to improve symmetrical CMOS OTA behaviour in subthreshold region

Hakan KUNTMAN
Gürsel DÜZENLİ
Pages
527–535
Publication Date
2022-10-18
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The result is proven by SPICE simulations and by measurements.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region.
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Key Findings & Data:In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA.
💡
Conclusion & Impact:The result is proven by SPICE simulations and by measurements.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then operating in the strong inversion region. In this paper a new method is proposed to reduce the dependence on channel length modulation and to improve the OTA behaviour by changing one of the MOS transistor dimensions in the CMOS symmetrical OTA. The result is proven by SPICE simulations and by measurements.

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Cite This Article

KUNTMAN, H., DÜZENLİ, G. (2022). A study to improve symmetrical CMOS OTA behaviour in subthreshold region. Istanbul University Journal of Electrical and Electronics Engineering, Cilt: 2 - Sayı: 2, 527–535. https://ajindex.com/articles/543924

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References (7)

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