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Dergiler / Sigma Mühendislik ve Fen Bilimleri Dergisi / 2016 / Cilt: 34 - Sayı: 2

ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

Kutsal BOZKURT
Sayfa
255–259
Yayın Tarihi
2016-06-01
DOI
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Yapay Zeka Hızlı Bakış & Çıkarımlar

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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements.
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Temel Bulgular & Veri:Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm.
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Sonuç & Katkı:This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.
🔬Tür:Laboratuvar & Saha Deneyi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:quantum dashes · and annihilation.

Abstract

MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.

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Bu Makaleye Atıf Yap

BOZKURT, K. (2016). ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. Sigma Mühendislik ve Fen Bilimleri Dergisi, Cilt: 34 - Sayı: 2, 255–259. https://ajindex.com/articles/419280

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Kaynakça (9)

  1. Rudno-Rudzi´nski W., Sek G., Andrzejewski J., Misiewicz J., Lelarge F., and Rousseau B., (2012) Electronic structure and optical properties of 1.55µm emitting InAs/InGaAsP quantum dash tunnel injection structures, Semiconductor Science and Technology 27, no. 10, pp. 105015
  2. Raisky O. Y., Wang W. B., Alfano R. R., Reynolds C. L., and Swaminathan V., (1997) Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures, Journal of Applied Physics 81, no. 1, pp. 394
  3. Rudno-Rudzi´nski W., Kudrawiec R., Podemski P., Sek G., Misiewicz J., Somers A., Schwertberger R., Reithmaier J. P., and Forchel A., (2006) Photoreflectance-probed excited states in InAs/InGaAlAs quantum dashes grown on Inp substrate, Applied Physics Letters 89, no. 3, pp. 031908
  4. Rudno-Rudzi´nski W., Sek G., Ryczko K., Kudrawiec R., Misiewicz J., Somers A., Schwertberger R., Reithmaier J. P., and Forchel A., (2005) Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures, Applied Physics Letters 86, no. 10, pp. 101904-1
  5. Podemski P., Kudrawiec R., Misiewicz J., Somers A., Schwertberger R., Reithmaier J. P., and A. Forchel, (2006) Thermal quenching of photoluminescence from InAs/In0.53Ga0.23 Al0.24/As/InP quantum dashes with different sizes, Applied Physics Letters 89, no. 15, pp. 151902
  6. Sek G., Poloczek P., Podemski P., Kudrawiec R., Misiewicz J., Somers A., Hein S., H¨ofling S., and Forchel A., (2007) Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 µm emission, Applied Physics Letters 90, no. 8, pp. 081915
  7. R. Kudrawiec, Sek G., Motyka M., Misiewicz J., Somers A., H¨ofling S., Worschech L., and Forchel A., (2010) Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In 0.53Ga0.23Al0.24 As quantum well and InAs quantum dashes, Journal of Applied Physics 108, no. 8, pp. 17
  8. Mitchell D. B., Robinson B. J., Thompson, D. A., Li Q., Benjamin S. D., and Smith P. W. E., (1996) He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials, Applied Physics Letters 69, no. 4, pp. 509
  9. Ayarcı N., Özdemir O., Bozkurt K., Ramdane A., Belahsene S. and Martinez A., (2016) Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements, IEEE Transactions on Electron Devices 63, no.5, pp.1866.