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Journals / Sigma Mühendislik ve Fen Bilimleri Dergisi / 2016 / Cilt: 34 - Sayı: 2

ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

Kutsal BOZKURT
Pages
255–259
Publication Date
2016-06-01
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.

📌 3 Key Takeaways

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Objective & Hypothesis:MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements.
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Key Findings & Data:Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm.
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Conclusion & Impact:This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.
🔬Design:Lab & Field Experiment
📍Scope:Comprehensive Sample
⚙️Variables:quantum dashes · and annihilation.

Abstract

MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.

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Cite This Article

BOZKURT, K. (2016). ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE. Sigma Mühendislik ve Fen Bilimleri Dergisi, Cilt: 34 - Sayı: 2, 255–259. https://ajindex.com/articles/419280

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References (9)

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