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Dergiler / Turkish Journal of Physics / 2014 / Cilt: 38 - Sayı: 1

XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

EBRU ŞENADIM TÜZEMEN
Hülya ŞAHİN
KAMURAN KARA
Sezai ELAGÖZ
RAMAZAN ESEN
Sayfa
111–117
DOI
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We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.

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Amaç & Hipotez:A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system.
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Temel Bulgular & Veri:The ZnO:Al thin film was thermally annealed for 1 h at 2 different temperatures in air.
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Sonuç & Katkı:We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Al-doped zinc oxide · annealing temperature · diffuse and specular reflectance

Özet

A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 different temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction (XRD). ZnO:Al film annealed at 500 °C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO:Al film at 600 °C, it showed (100) and (002) peaks at around 32° and 34°, respectively. The chemical state of ZnO:Al (AZO) film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy (XPS). The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.

Abstract

A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 different temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction (XRD). ZnO:Al film annealed at 500 °C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO:Al film at 600 °C, it showed (100) and (002) peaks at around 32° and 34°, respectively. The chemical state of ZnO:Al (AZO) film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy (XPS). The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.

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Bu Makaleye Atıf Yap

TÜZEMEN, E. Ş., ŞAHİN, H., KARA, K., ELAGÖZ, S., ESEN, R. (2014). XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate. Turkish Journal of Physics, Cilt: 38 - Sayı: 1, 111–117. https://ajindex.com/articles/378045

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