KaydedilenlerDerginizi ekleyin

Dergiler / Turkish Journal of Physics / 2014 / Cilt: 38 - Sayı: 2

Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

KAMURAN KARA
EBRU ŞENADIM TÜZEMEN
RAMAZAN ESEN
Sayfa
238–244
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The Raman scattering spectra of the films was observed at a laser power of 2 mW.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method.
📊
Temel Bulgular & Veri:The films had a weak peak (100) orientation at 2theta = sim 32°.
💡
Sonuç & Katkı:The Raman scattering spectra of the films was observed at a laser power of 2 mW.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:ZnO · Kubelka-Munk function · Raman scattering

Özet

In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2theta = sim 32°. X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850 °C showed a strong ZnO (002) diffraction peak centered at 34.1° and 34.5°, respectively. The (004) peak was seen for film annealed at 850 °C. ZnO film annealed at 850 °C had higher grain size and better crystallinity. Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 °C was 3.00 and 3.28 eV, respectively. The Raman scattering spectra of the films was observed at a laser power of 2 mW.

Abstract

In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2theta = sim 32°. X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850 °C showed a strong ZnO (002) diffraction peak centered at 34.1° and 34.5°, respectively. The (004) peak was seen for film annealed at 850 °C. ZnO film annealed at 850 °C had higher grain size and better crystallinity. Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 °C was 3.00 and 3.28 eV, respectively. The Raman scattering spectra of the films was observed at a laser power of 2 mW.

🔖

Bu Makaleye Atıf Yap

KARA, K., TÜZEMEN, E. Ş., ESEN, R. (2014). Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD. Turkish Journal of Physics, Cilt: 38 - Sayı: 2, 238–244. https://ajindex.com/articles/378003

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (2)

  1. Kim, H. W.; Kebede, M. A.; Kim, H. S. Curr. Appl. Phys. 2010, 10, 6[F63. Yamada, H.; Ushimi, Y.; Takeuchi, M.; Yoshino, Y.; Makino, T.; Arai, S. Vacuum 2004, 74, 6894392. Tominaga, K.; Murayama, T.; Mori, I.; Okamoto, T.; Hiruta, K.; Moriga, T.; Nakabayashi, I. Vacuum 2000, 5.9, —552. Qi, H.; Li, O.; Wang, C.; Zhang, L.; Lv, L. Vacuum 2007, 81, 943—946. Xiao, Z. Y.; Liu, Y. C.; Zhao, D. X.; Zhang, J. Y.; Lu, Y. M.; Shen, D. Z.; Fan, X. W. J. Lumin. 2007, 122—123, —824. Xu, Q.; Cheng, Q.; Zhang, Z.; Hong, R.; Chen, X.; Wua, Z.; Zhang, F. J. Alloy. Compd. 2014, 590, 260—265. Cheng, Q.; Ostrikov, K. C'ryst. Eng. Comm. 2011, 13, 3455—3461. Cheng, Q.; Ostrikov, K. Chem. Phys. Chem. 2010, 13, 1535—1541. Sun, K.; Jing, Y.; Li, C.; Zhang, X.; Aguinaldo, R.; Kargar, A.; Madsen, K.; Banu, K.; Zhou, Y.; Bando, Y.; et al. Nanoscale 2012, 4, 1515—1521. Wei, M.; Boutwell, R. C.; Garrett, G. A.; Goodman, K.; Rotella, P.; Wraback, M.; Schoenfeld, W. V. J. Alloy. Lee, J. Y.; Choi, Y. S.; Choi, W. H.; Yeom, H. W.; Yoon, Y. K.; Kim, J. H.; Im, S. Thin Solid Films 2002, 420—421, —116. Khranovskyy, V.; Ulyashin, A.; Lashkarev, G.; Svensson, B. G.; Yakimova, R. Thin Solid Films 2008, 516, 1396— Fang, Z.; Wang, Y.; Xu, D.; Tan, Y.; Liu, X. Opt. Mater. 2004, 26, 239—242. Mansour, S. A.; Yakuphanoglu, F. Solid State Sci. 2012, 14, 121—126. Heitsch, S.; Bundesmann, C.; Wagner, G.; Zimmermann, G.; Rahm, A.; Hochmuth, H.; Benndorf, G.; Schmidt, H.; Schubert, M.; Lorenz, M.; et al. Thin Solid Films 2006, 496, 234—239. EEEEEE _£E£.££._. Şenadım, E.; Kavak, H.; Esen, R. J. Phys.-Gondens. Mat. 2006, 186, 6391—6400. E _£E£.££._. 4; _£E£.££._. Zhang, Y.; Du, G.; Liu, D.; Wang, X.; Ma, Y.; Wang, J.; Yin, J.; Yang, X.; Hou, X; Yang, S. J. Cryst. Growth Zhang, Y.; Du, G.; Yang, X.; Zhao, B.; Ma, Y.; Yang, T.; Ong, H. C.; Liu, D.; Yang, S. Semicond. Sci. Technol., 6481, 64810N—1. Alim, K.; Fonoberov, V. A.; Shamsa, M.; Balandin, A. A. J. Appl. Phys. 2005,.97, 124313-1-5.
  2. Ashkenov, N.; Mbenkum, B. N.; Bundesmann, C.; Riede, V.; Lorenz, M.; Spemann, D.; Kaidashev, E. M; Kasic, A.; Schubert, M.; Grundmann, M.; et al. J. Appl. Phys. 2003, 93, 126—133. Tauc, J.; Menth, A. J. Non-Cryst. Solids 1972, 8—10, 569—585. Kako, T.; Kikugawa, N.; Ye, J. Catal. Today 2008, 131, 197—202. Yakuphanoglu, F. J. Alloy. Compd. 2010, 507, 184—189. Coşkun, C.; Güney, H.; Gür, E.; Tüzemen, S. Turk. J. Phys. 2009, 33, 4956.