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Dergiler / International Journal of Chemistry and Technology / 2019 / Volume: 3 Issue: 2

Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer

Muhammed Can Özdemir(İSTANBUL MEDENİYET ÜNİVERSİTESİ)0000-0002-4002-7967
Ömer Sevgili(BİNGÖL ÜNİVERSİTESİ)0000-0003-1740-1444
İkram Orak(BİNGÖL ÜNİVERSİTESİ)0000-0003-2318-9718
Abdülmecit Türüt(İSTANBUL MEDENİYET ÜNİVERSİTESİ)0000-0002-4664-4528
Sayfa
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Yayın Tarihi
2019-12-31
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Interface state density decreased from 4.31 x 10 12 eV -1 cm -2 at 100 kHz to 7.30 x 10 11 eV -1 cm -2 at 1000 kHz, because the interface charges do not follow the ac signal and do not contribute to capacitance values in high frequencies.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:Al/ p -Si/Al diodes with interfacial native oxide layer were formed.
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Temel Bulgular & Veri:The majority carrier density corresponding to the depletion and inversion parts of the C -2 - V curve, was determined 1.82 x 10 14 and 4.48 x 10 14 cm -3 at 1000 kHz, respectively.
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Sonuç & Katkı:Interface state density decreased from 4.31 x 10 12 eV -1 cm -2 at 100 kHz to 7.30 x 10 11 eV -1 cm -2 at 1000 kHz, because the interface charges do not follow the ac signal and do not contribute to capacitance values in high frequencies.
🔬Tür:Research Article
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Metal-semiconductor contacts · MIS diodes · interface states

Abstract

Al/ p -Si/Al diodes with interfacial native oxide layer were formed. Their frequency induced admittance-voltage measurements were made. The frequency-dependent density distribution of interface states has been determined from the corrected characteristics by considering the series resistance effect which masks the interface trap loss. The majority carrier density corresponding to the depletion and inversion parts of the C -2 - V curve, was determined 1.82 x 10 14 and 4.48 x 10 14 cm -3 at 1000 kHz, respectively. The fact that the carrier density obtained from the inversion part of the plot is higher than that obtained from the depletion part can be related to the increase in the density of negative space charge in the depletion region.The value of was determined as 0.95 eV from the same plot. Interface state density decreased from 4.31 x 10 12 eV -1 cm -2 at 100 kHz to 7.30 x 10 11 eV -1 cm -2 at 1000 kHz, because the interface charges do not follow the ac signal and do not contribute to capacitance values in high frequencies.

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Bu Makaleye Atıf Yap

Özdemir, M. C., Sevgili, Ö., Orak, İ., Türüt, A. (2019). Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer. International Journal of Chemistry and Technology, Volume: 3 Issue: 2. https://doi.org/10.32571/ijct.642886

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