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Dergiler / Gazi University Journal of Science / 2014 / Volume: 27 Issue: 4

THE EFFECT OF GROWTH CONDITIONS ON THE OPTICAL AND STRUCTURAL PROPERTIES OF InGaN/GaN MQW LED STRUCTURES GROWN BY MOCVD

Saime Cetin
Semran Sağlam
Süleyman Özçelik
Ekmel Özbay
Sayfa
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Yayın Tarihi
2014-08-27
DOI
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Yapay Zeka Hızlı Bakış & Çıkarımlar

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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The emission wavelength can be tuned by way of changing the well growth time of the samples.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate.
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Temel Bulgular & Veri:The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence.
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Sonuç & Katkı:The emission wavelength can be tuned by way of changing the well growth time of the samples.
🔬Tür:Conference Paper
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Metalorganic chemical vapor deposition · InGaN · Light emitting diode

Abstract

Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples.

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Bu Makaleye Atıf Yap

Cetin, S., Sağlam, S., Özçelik, S., Özbay, E. (2014). THE EFFECT OF GROWTH CONDITIONS ON THE OPTICAL AND STRUCTURAL PROPERTIES OF InGaN/GaN MQW LED STRUCTURES GROWN BY MOCVD. Gazi University Journal of Science, Volume: 27 Issue: 4. https://ajindex.com/articles/1269649

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Kaynakça (28)

  1. Y. D. Qi, H. Liang, D. Wang, Z. D. Lu, W. Tang, K. M. Lau, Appl. Phys. Lett. 86, 101903 (2005)
  2. K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, Solid State Electron. 50, 119 (2006)
  3. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin, (1997).
  4. H. Y. Lee, K. H. Pan, C. C. Lin, Y. C. Chang, F. J. Kao, C. T. Lee, J. Vac. Sci. Technol. B 25(4), 1280 (2007).
  5. M. S. Oh, M. K. Kwon, I. K. Park, S. H. Baek, S. J. Park, S. H. Lee, J. J. Jung, J. Cryst. Growth 289, 107 (2006).
  6. R. C. Tu, C. J. Tun, J. K. Sheu, W. H. Kuo, T. C. Wang, C. E. Tsai, J. T. Hsu, J. Chi, G. C. Chi, IEEE Electr. Device L. 24, 206 (2003).
  7. S. Korcak, M. K. Ozturk, S. Corekci, B. Akaoglu, H. Yu, M. Cakmak, S. Saglam, S. Ozcelik, E. Ozbay, Sur. Sci. 601, 3892 (2007).
  8. S. Corekci, M. K. Ozturk, B. Akaoglu, M. Cakmak, S. Ozcelik, E. Ozbay, J. Appl. Phys. 101(1), 23502 (2007).
  9. E. Arslan, M. K. Ozturk, A. Teke, S. Ozcelik, E. Ozbay, J. Phys. D. Appl. Phys. 41(1), 55317 (2008).
  10. K. Kim, C. S. Kim, J. Y. Lee. J. Phys.: Condens. Mat. 18, 127 (2006).
  11. T. Egawa, H. Ohmura, H. Ishikawa, T. Jimbo, Appl. Phys. Lett. 81, 292 (2002).
  12. J. Bai, T. Wang, P. J. Parbrook, I. M. Ross, A. G. Cullis, J. Cryst. Growth 289, 63 (2006).
  13. H. Yu, M. K. Ozturk, S. Ozcelik, E. Ozbay, J. Cryst. Growth. 293, 273 (2006).
  14. T. K. Kim, S. K. Shim, S. S. Yang, J. K. Son, Y. K. Hong, G. M. Yang, Curr. Appl. Phys. 7, 469 (2007).
  15. Y. H. Cho, F. Fedler, R. J. Hauenstein, G. H. Park, J. J. Song, S. Keller, U. K. Mishra, S. P. DenBaars, J. Appl. Phys. 85, 3006 (1999).
  16. S. Kim, K. Lee, K. Park, C. S. Kim, J. Cryst. Growth 247, 62 (2003).
  17. S. Keller, S. F. Chichibu, M. S. Minsky, E. Hu, U. K. Mishra, S. P. DenBaars, J. Cryst. Growth 195, 258 (1998).
  18. W. Liu, S. J. Chua, X. H. Zhang, J. Zhang, Appl. Phys. Lett. 83, 914 (2003).
  19. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura, Appl. Phys. Lett. 70, 981 (1997).
  20. A. Yildiz, F. Dagdelen, S. Acar, S. B. Lisesivdin, M. Kasap, Y. Aydogdu, M. Bosi, Acta Physica Polonica A 113, 731 (2008).
  21. S. Ş. Çetin, M. K. Öztürk, S. Özçelik, E. Özbay, Cryst. Res. Technol., 47 (8), 824 (2012).
  22. LEPTOS User Manual (www.bruker-axs.de), Version 2 (2004).
  23. R. J. Choi, E. K. Suh, H. J. Lee, Y. B. Hahn, Korean J. Chem. Eng. 22(2), 298 (2005).
  24. A. T. Cheng, Y. K. Su, W. C. Lai, J. Cryst. Growth 298, 508 (2007).
  25. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
  26. Y. Yu, M. Ryu and P.W. Yu, D. Kim and S. Park, J. the Korean Physical Society, 38(2), 134 (2001).
  27. D. Y. Lin, W. L. Chen, W. C. Lin, J. J. Shiu, J. Han, Phys. Stat. Sol. (c) 3(6), 1983 (2006).
  28. S. Srinivasan, F. Bertram, A. Bell, F. A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, Appl. Phys. Lett. 80, 550 (2002).