✨
Yapay Zeka Hızlı Bakış & Çıkarımlar
AI Insight⚡ TL;DR(1 Cümlede Hızlı Çıkarım)
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
📌 3 Maddede Bu Makale
🎯
Amaç & Hipotez:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
📊
Temel Bulgular & Veri:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
💡
Sonuç & Katkı:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri
Abstract
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
🔖
Bu Makaleye Atıf Yap
KACAR, F., KUNTMAN, A., KUNTMAN, H. (2011). A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS. Electrica, Cilt: 1 Sayı: 2, 201–208. https://ajindex.com/articles/1017788