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AI Summary & Key Takeaways
AI Insight⚡ TL;DR(Too Long; Didn't Read)
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
📌 3 Key Takeaways
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Objective & Hypothesis:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
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Key Findings & Data:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
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Conclusion & Impact:Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Abstract
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
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Cite This Article
KACAR, F., KUNTMAN, A., KUNTMAN, H. (2011). A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS. Electrica, Cilt: 1 Sayı: 2, 201–208. https://ajindex.com/articles/1017788