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Journals / Journal of Scientific Reports-A / 2015 / Sayı: 2015 Özel Sayısı

CURRENT-VOLTAGE CHARACTERISTICS OF Ag/TiO2/n-InP SCHOTTKY BARRIER DIODE

Ag/TiO2/n-InP SCHOTTKY BARİYER DİYOTUN AKIM-VOLTAJ KARAKTERİSTİKLERİ

Ahmet Kürşat BİLGİLİ
Metin ÖZER
Pages
39–44
Publication Date
2016-01-15
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

According to these results ideality factor n decrease and barrier height (Fb0) increase with an increase in temperature.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Current-voltage (I-V) characteristics of Ag/TiO2/n-InP Schottky barrier diodes have been investigated in the temperature range 300-400 K .
📊
Key Findings & Data:Here TiO2 film with 120 Å thickness has been used as interfacial layer between metal and semiconductor layers.
💡
Conclusion & Impact:According to these results ideality factor n decrease and barrier height (Fb0) increase with an increase in temperature.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:n-InP · Schottky bariyeri · bariyer yüksekliği

Abstract

Current-voltage (I-V) characteristics of Ag/TiO2/n-InP Schottky barrier diodes have been investigated in the temperature range 300-400 K . Here TiO2 film with 120 Å thickness has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (Fb0) and ideality factor n determined from forward bias I-V characteristics were found strongly dependent on temperature. We calculated parameters of the diode, by using Termoionic Emission Theory (TE), we have seen that the results are in accordiance with the theory. According to these results ideality factor n decrease and barrier height (Fb0) increase with an increase in temperature.

Özet

Ag/TiO2/n-InP/Au Schottky bariyerli diyotların akım-voltaj karakteristikleri 300-400 K sıcaklık aralığında incelendi. Metal ile yarıiletken arasına 120 Å kalınlığında TiO2 film tabakası oluşturuldu. Diyotun ileri beslem akım-voltaj (I-V) karakteristiklerinden termiyonik emisyon modeline göre, sıfır beslem bariyer yüksekliği ve idealite faktörü parametreleri hesaplandı. Parametrelerin sıcaklığa bağlı olarak değiştiği ve sıcaklık artarken bariyer yüksekliğinin arttığı ve idealite faktörünün azaldığı görüldü.

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Cite This Article

BİLGİLİ, A. K., ÖZER, M. (2016). CURRENT-VOLTAGE CHARACTERISTICS OF Ag/TiO2/n-InP SCHOTTKY BARRIER DIODE. Journal of Scientific Reports-A, Sayı: 2015 Özel Sayısı, 39–44. https://ajindex.com/articles/779053

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References (9)

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