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Journals / Turkish Journal of Physics / 2005 / Cilt: 29 - Sayı: 4

Some Physical Properties of g Irradiated Gex(As2Te3)100 - x Chalcogenide System

Afaf ABDEL-AAL
Bahiga Abdel-Hameed MANSOUR
Hoda Mohamed EISSA
Pages
223–232
Publication Date
2005-04-01
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied.
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Key Findings & Data:The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage.
💡
Conclusion & Impact:As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Chalcogenide-glasses · gamma-ray effects · visible-spectra

Abstract

The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.

Özet

The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.

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Cite This Article

ABDEL-AAL, A., MANSOUR, B. A., EISSA, H. M. (2005). Some Physical Properties of g Irradiated Gex(As2Te3)100 - x Chalcogenide System. Turkish Journal of Physics, Cilt: 29 - Sayı: 4, 223–232. https://ajindex.com/articles/724099

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References (2)

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