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AI Summary & Key Takeaways
AI Insight⚡ TL;DR(Too Long; Didn't Read)
The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage.
📌 3 Key Takeaways
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Objective & Hypothesis:The effect of $gamma$ -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system $Ge_x(As_2Te_3)_{100-x}$ (where x = 0,1,5,10 atm %) have been studied.
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Key Findings & Data:The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage.
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Conclusion & Impact:As the $gamma$ -doses increase, the values of the allowed indirect optical energy gap $E_{opt}$ for the different compositions decreases and the tail energy width increases.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Abstract
The effect of $gamma$ -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system $Ge_x(As_2Te_3)_{100-x}$ (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the $gamma$ -doses increase, the values of the allowed indirect optical energy gap $E_{opt}$ for the different compositions decreases and the tail energy width increases.
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Cite This Article
EISSA, H. M., ABDEL-AAL, A., MANSOUR, B. A. (2022). Some physical properties of $gamma$ irradiated $Ge_x(As_2Te_3)_{100-x}$ chalcogenide system. Turkish Journal of Physics, Cilt: 29 - Sayı: 4, 223–232. https://ajindex.com/articles/614063