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Journals / Türk Doğa ve Fen Dergisi / 2020 / Cilt: 9 - Sayı: Özel Sayı

Physical characteristics of n-Si/GaN thin films: effect of different N rates

n-Si / GaN ince filmlerin fiziksel özellikleri: farklı N oranı etkisi

Asim MANTARCI
Pages
141–147
Publication Date
2022-11-03
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Produced thin films can be basic material indevice applications such as solar cells, Light Emitting Diode (LED).

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The GaN thin film was fabricated on n-type Si by a Radio Frequency magnetronsputtering method with applied various nitrogen (N) rates.
📊
Key Findings & Data:The XRD confirmed the produced filmhad in a polycrystalline structure (orientations (110) and (100)).
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Conclusion & Impact:Produced thin films can be basic material indevice applications such as solar cells, Light Emitting Diode (LED).
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The GaN thin film was fabricated on n-type Si by a Radio Frequency magnetronsputtering method with applied various nitrogen (N) rates. The XRD confirmed the produced filmhad in a polycrystalline structure (orientations (110) and (100)). It was seen that different N ratesvaried structural parameters of fabricated material. The optical analysis showed that various N rateschanged thin film optical-band gap energy by reason of reduced N vacancy. The AFM picturesdemonstrated almost homogeneous with periodic grain arrangements, Nano-structured surface ofGaN thin film. From SEM pictures, we detected agglomerations on the surface of the GaN thin film.Possible causes of them were deeply discussed. Raman results proved the correspondingcharacteristic E2(high) peak of the hexagonal GaN and exhibited that all thin films had tensilestress. Reasons of this stress were discussed. Optical, morphological, structural parameters of 𝐺𝑎𝑁thin film can be improved with controlling N rates. Produced thin films can be basic material indevice applications such as solar cells, Light Emitting Diode (LED).

Özet

GaN ince filmi, Radyo Frekansı magnetron saçtırma yöntemi ile n-tipi Si üzerinde farklı N oranları uygulanarak üretildi. XRD analizleri üretilen filmin polikristal yapıda olduğunu (oryantasyon (110) ve (100)) teyit etmiştir. Farklı N oranlarında malzemenin yapısal parametrelerinin değiştiği görülmektedir. Optik analiz, çeşitli N oranlarının Azot boşluğunun azalması nedeniyle ince film optik bant boşluk enerjisini değiştirdiğini göstermektedir. AFM resimleri, GaN ince filminin Nano yapılı bir yüzeye sahip olduğunu ve periyodik tanecik yapısı gösterdiğini neredeyse homojen olan yapıyı göstermiştir. SEM resimlerinden GaN ince filminin yüzeyinde topaklar tespit ettik. Bunların olası nedenleri detaylı tartışıldı. Raman sonuçları, altıgen GaN'nin karşılık gelen karakteristik E2 (yüksek) optic fonon titreşimini kanıtlamıştır ve tüm ince filmlerin sıkıştırma gerginliğine sahip olduğunu göstermiştir. Filmde oluşan bu stresin nedenleri tartışıldı. GaN ince filmin optik, morfolojik, yapısal parametreleri N oranlarının kontrol edilmesiyle iyileştirilebildiği bulunmuştur. Üretilen ince filmler, güneş pilleri, Işık Yayan Diyot (LED) gibi cihaz uygulamalarında temel malzeme olabilmektedir.

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Cite This Article

MANTARCI, A. (2022). Physical characteristics of n-Si/GaN thin films: effect of different N rates. Türk Doğa ve Fen Dergisi, Cilt: 9 - Sayı: Özel Sayı, 141–147. https://ajindex.com/articles/622591

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