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Journals / Politeknik Dergisi / 2020 / Cilt: 23 - Sayı: 2

XRD vs Raman for InGaN/GaN Structures

InGaN/GaN Yapılar için XRD-Raman Karşılaştırması

Ahmet Kürşat BİLGİLİ
Ömer AKPINAR
Mustafa Kemal ÖZTÜRK
Süleyman ÖZÇELİK
Ekmel ÖZBAY
Pages
291–296
Publication Date
2022-10-18
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

According to Raman peak center data, these white regions are detected as white rust.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, InGaN/GaN structures are grown by using Metal Organic Chemical Vapor Deposition (MOCVD) technique.
📊
Key Findings & Data:Somestructural, optical and morphological properties of InGaN/GaN structures are investigated in detail.
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Conclusion & Impact:According to Raman peak center data, these white regions are detected as white rust.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, InGaN/GaN structures are grown by using Metal Organic Chemical Vapor Deposition (MOCVD) technique. Somestructural, optical and morphological properties of InGaN/GaN structures are investigated in detail. For structural analysis, X-raydiffraction (XRD), for optical, Raman and morphological, Atomic Force Microscopy (AFM) measurement techniques are used. InXRD analysis both samples presented hexagonal crystal structure. XRD peaks for these two samples showed small differencesdependent on growth conditions. Strain and stress values are determined from XRD and they are compared with Raman results. InRaman analysis, five different chemicals are determined in both samples. Raman analysis results are in good accordance with XRD,growth conditions and AFM images. In AFM images, there can be seen hills and holes and they are partly homogeneous. Thereare also some white regions in AFM images. According to Raman peak center data, these white regions are detected as white rust.

Özet

Bu çalışmada, InGaN/GaN yapılar Metal Organik Kimyasal Buhar Biriktirme (MOCVD) yöntemiyle büyütülmüştür. Bu InGaN/GaN yapıların bazı yapısal, optik ve morfolojik özellikleri detaylı olarak incelenmiştir. Yapısal analiz için X-ışınları kırınımı (XRD), optik özellikler için Raman ve morfolojik özellikler için Atomik Kuvvet Mikroskobu (AFM) kullanılmıştır. XRD analizine göre her iki örnek altıgensel yapı sergilemiştir. Bu iki örnek için elde edilen XRD pikleri büyütme şartlarına bağlı olarak küçük farklılıklar göstermiştir. Gerilme ve stress değerleri XRD den elde edilip Raman sonuçlarıyla kıyaslanmıştır. Raman analizinde, her iki örnekte beş farklı kimyasal tespit edilmiştir. Raman analizi sonuçları XRD ile büyütme koşulları ile ve AFM görüntüleriyle iyi bir uyum içindedir. AFM görüntülerinde tepeler ve çukurlar görülebilir ve bunlar kısmen homojendir. AFM görüntülerinde bir de beyaz bölgeler vardır. Raman pik merkezi verilerine göre bu beyaz bölgeler Beyaz Pastır.

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Cite This Article

BİLGİLİ, A. K., AKPINAR, Ö., ÖZTÜRK, M. K., ÖZÇELİK, S., ÖZBAY, E. (2022). XRD vs Raman for InGaN/GaN Structures. Politeknik Dergisi, Cilt: 23 - Sayı: 2, 291–296. https://ajindex.com/articles/588436

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References (14)

  1. Huang C.F., Hsieh W.Y., Hsieh B.C., Hsieh C.H. and Lin C.F., “Characterization of InGaN-based photovoltaic devices by varying the indium contents”, Thin Solid Films, 529: 278-281, (2013)
  2. Neudeck P.G., R.S Okojie. and L.Y. Chen., “Hightemperature electronics - A role for wide bandgap semiconductors”, Proceedings of the Ieee, 90(6): 1065- 1076, (2002)
  3. Monemar B, Paskov P.P. and Kasic A., “Optical properties of InN—the bandgap question”, Supperlatt. Microstruct, 38, (2005)
  4. Nanishi Y., Saito Y. and Yamaguchi T., “RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys”, Japan J. Appl. Phys, 42: 2549, (2003)
  5. Lee S.N., Tan N., Lee W., Paek H., Seon M., Lee I.H., Nam O. and Park Y., “Characterization of optical and crystal qualities in InxGa1–xN/InyGa1–yN multiquantum wells grown by MOCVD”, J. Cryst. Growth, 250: 256, (2003)
  6. Lafont U., Zeijl H. and Zwaag S., “ Increasing the reliability of solid state lighting system via self-healing approaches”, Microelectronic Reliability, 52(1): 71- 89, (2012)
  7. Akpinar., O., Bilgili A.K., Öztürk M.K., Özçelik S. and Özbay E., “On the elastic properties of INGAN/GAN LED structures”, Applied Physics a-Materials Science & Processing, 125(2): (2019)
  8. Oura K., Lifshitsi V.G., Saranin A.A., Zotov A.V. and M. Katayama., “Surface science (First edition)”, Berlin: Springer 166 (229): 378-382, (2003)
  9. Arulkumaran S., Egawa T., Ishikawa H. and Jimb T., “Characterization of different-Al-content AlxGa1-xN/GaN hetrostructures and high-electron-mobility transistors on sapphire”, Journal of Vacuum Science & Technology, 21(2): 888-894, (2003)
  10. Akasaki I. and Amano H., “Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode”, Japanese Journal of Applied Physics, 47(5): 3781-3781, (2008)
  11. Ambacher O., “ Growth and applications of Group IIInitrides”, Journal of Applied, 31(1): 2653–2710, (1998)
  12. Vickers M.E., Kappers M.J., Datta R., McAleese C., Smeeton T.M., Rayment F.D.G. and Humphreys C.J.,” In-plane imperfections in GaN studied by x-ray diffraction”, Journal of Physics D: Applied Physics, 38(A10): A99-A104, (2006)
  13. Moram M.A. and Vickers M.E., “X-ray diffraction of IIInitrides”, Reports on Progress in Physics, 72(3): (2009)
  14. Yu H., Ozturk M.K., Ozcelik S. and Ozbay E.,”MOCVD growth and optical properties of non-polar (11-20) aplane GaN on (10-12)r-plane sapphire substrate”, J. Cryst. Growth, 293: 273, (20