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Journals / Karadeniz Fen Bilimleri Dergisi / 2022 / Cilt: 12 - Sayı: 1

Investigation of Structural and Electrical Properties of Metal Oxide and Organic Based Multi Heterojunction

Metal Oksit ve Organik Bazlı Çoklu Heteroeklemin Yapısal ve Elektriksel Özelliklerinin İncelenmesi

Fatih ÜNAL
Sıtkı AKTAŞ
Pages
508–520
Publication Date
2022-10-19
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

As a result, it was observed that the Ag/ITO/ZnO/C24H12/Ag multi-heterojunction exhibited photodiode and photovoltaic behaviour.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, semiconductor metal oxide ZnO compound was grown on glass/ITO substrate by electrochemical deposition technique.
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Key Findings & Data:Later on, C24H12 organic semiconductor layer was deposited on glass/ITO/ZnO junction by thermal evaporation method and glass/ITO/ZnO/C24H12 multi heterojunction was fabricated.
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Conclusion & Impact:As a result, it was observed that the Ag/ITO/ZnO/C24H12/Ag multi-heterojunction exhibited photodiode and photovoltaic behaviour.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Fotodiyot · Çoklu heteroeklem · Hibrit heteroeklem

Abstract

In this study, semiconductor metal oxide ZnO compound was grown on glass/ITO substrate by electrochemical deposition technique. Later on, C24H12 organic semiconductor layer was deposited on glass/ITO/ZnO junction by thermal evaporation method and glass/ITO/ZnO/C24H12 multi heterojunction was fabricated. Surface analyses of produced layers was performed by Scanning electron microscopy (SEM) and it is seen that surface morphology of ZnO and C24H12 has nanoflake-nanorod structures and, nanowire structure, respectively. In addition, the elemental distribution of the ZnO layer was examined by Energy dispersive X-ray spectroscopy (EDS), and it was observed that Zn and O elements exhibited a homogeneous distribution within the layer. The electrical properties of Ag/ITO/ZnO/C24H12/Ag multi heterojunction were characterized under dark and 100mW/cm2 light intensity in the range of ±1.5V application potential. In the dark environment, series resistance (Rs), diode ideality factor (n), barrier height (∅b), reverse saturation current (I0) were ≈104Ω, 7.5-6.5, 0.647 eV and 5.7x10-7 A, respectively, while under 100mW/cm2 light intensity, these values were found to be ≈ 103Ω, 6.5-1.3, 0.914 eV and 1. 9x10-11 A, respectively. The photocurrent (Iph), photosensitivity (R) and photosensitivity (S) values, which are important parameters for the photoconductivity mechanism of the multi heterojunction, were determined at different voltage values under forward bias. In addition, the photovoltaic parameters of the multi heterojunction were calculated and the fill factor FF was found to be 0.56. As a result, it was observed that the Ag/ITO/ZnO/C24H12/Ag multi-heterojunction exhibited photodiode and photovoltaic behaviour.

Özet

Bu çalışmada, yarıiletken metal oksit ZnO bileşiği elektrokimyasal kaplama yöntemi kullanılarak cam/ITO üzerine büyütülmüştür. Daha sonra C24H12 organik yarıiletken katmanı termal buharlaştırma yöntemiyle cam/ITO/ZnO ekleminin üzerine kaplanmıştır ve cam/ITO/ZnO/C24H12 çoklu heteroeklemi üretilmiştir. Üretilen tabakaların yüzeysel analizi taramalı elektron mikroskobu (SEM) ile yapılmış, ZnO tabakasının nanopul (nanoflake) ve nanoçubuk, C24H12 tabakasının nanotel şeklinde büyüdüğü görülmüştür. Ayrıca ZnO tabakasının elementel dağılımı Enerji dağılımlı X-ray spektroskopisi (EDS) ile incelenmiş, Zn ve O elementlerinin tabaka içerisinde homojen bir dağılım sergiledikleri görülmüştür. ±1.5V uygulama potansiyeli aralığında karanlık ve 100mW/cm2 ışık şiddeti altında Ag/ITO/ZnO/C24H12/Ag çoklu heteroekleminin elektriksel özellikleri karakterize edilmiş. Karanlik ortamda, seri direnç (Rs), diyot idealite faktörü (n), engel yüksekliği (∅_b), ters doyma akımı (I0) sırasıyla ≈104Ω, 7.5-6.5, 0.647 eV ve 5,7E-7 A değerlerini almışken, 100mW/cm2 ışık şiddeti altında bu değerlerin sırasıyla ≈103Ω, 6.5-1.3, 0.914 eV ve 1.9E-11 A olduğu görülmüştür. Çoklu heteroeklemin fotoiletkenlik mekanizması için önemli parametreler olan fotoakım (Iph), fotoduyarlılık (R) ve fotohassasiyet (S) değerleri ileri besleme altında farklı voltaj değerlerinde belirlenmiştir. Ayrıca çoklu heteroeklemin fotovoltaik parametreleri hesaplanmış ve dolum faktörü FF’nin 0.56 olduğu görülmüştür. Tüm bu analizler sonucunda ürettiğimiz Ag/ITO/ZnO/C24H12/Ag çoklu heteroeklemin fotodiyot ve fotovoltaik davranış sergilediği görülmüştür.

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Cite This Article

ÜNAL, F., AKTAŞ, S. (2022). Investigation of Structural and Electrical Properties of Metal Oxide and Organic Based Multi Heterojunction. Karadeniz Fen Bilimleri Dergisi, Cilt: 12 - Sayı: 1, 508–520. https://ajindex.com/articles/570364

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