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AI Summary & Key Takeaways
AI Insight⚡ TL;DR(Too Long; Didn't Read)
SPICE simulation results using MIETEC 1.2 $mu$ CMOS process model are given.
📌 3 Key Takeaways
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Objective & Hypothesis:In this paper a new CMOS realization for third generation current conveyor (CCIII) is proposed.
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Key Findings & Data:The circuit has 180MHz -3dB cutoff frequency in voltage follower mode.
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Conclusion & Impact:SPICE simulation results using MIETEC 1.2 $mu$ CMOS process model are given.
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Abstract
In this paper a new CMOS realization for third generation current conveyor (CCIII) is proposed. The proposed circuit provides high swing range at terminals X and Y. The circuit has low input impedances at terminals X and Y and high output impedance at terminals Z+ and Z-. The circuit has 180MHz -3dB cutoff frequency in voltage follower mode. SPICE simulation results using MIETEC 1.2 $mu$ CMOS process model are given.
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Cite This Article
YILDIZ, M., MINAEI, S., KUNTMAN, H., TÜRKÖZ, S. (2022). High swing CMOS realization for third generation current conveyor (CCIII). Istanbul University Journal of Electrical and Electronics Engineering, Cilt: 3 - Sayı: 1, 819–826. https://ajindex.com/articles/543921