Journals / Fırat Üniversitesi Fen ve Mühendislik Bilimleri Dergisi / 2001 / Cilt: 13 - Sayı: 1

Determination of current transport mechanism in n-CdS/p-Cu(In, Ga)Se2 heterojunction solar cell

n -CdS/ p-Cu (In, Ga)Se2 heteroeklem güneş pilinde akım iletim mekanizmasının belirlenmesi

Pages
97–102
Publication Date
2022-10-17
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Analysis of the 11.9 % efficient solar cell suggest that the dark current is controlled by the tunneling enhanced interface recombination with an activation energy of IeV and characteristic tunneling energy of 119 meV.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, the n-CdS/p-Cu(In,Ga)Se2 heterojunction solar cell having materials composed of 22.26% Cu, 19.46% In, 7.27% Ga ve 51.02 %Se and prepared in the IPE laboratory of University of Stuttgart was investigated.
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Key Findings & Data:The dominant current transport mechanism was determined by temperature dependent current-voltage measurements in dark.
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Conclusion & Impact:Analysis of the 11.9 % efficient solar cell suggest that the dark current is controlled by the tunneling enhanced interface recombination with an activation energy of IeV and characteristic tunneling energy of 119 meV.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, the n-CdS/p-Cu(In,Ga)Se2 heterojunction solar cell having materials composed of 22.26% Cu, 19.46% In, 7.27% Ga ve 51.02 %Se and prepared in the IPE laboratory of University of Stuttgart was investigated. The dominant current transport mechanism was determined by temperature dependent current-voltage measurements in dark. Analysis of the 11.9 % efficient solar cell suggest that the dark current is controlled by the tunneling enhanced interface recombination with an activation energy of IeV and characteristic tunneling energy of 119 meV.

Özet

Bu çalışmada Stuttgart Üniversitesi IPE laboratuarlarında hazırlanan ve emici tabakasını oluşturan materyallerin göreli ağırlık oranları; %22.26 Cu, %19.46 In,"%7.27 Ga ve %51.02 Se olan n-CdS/p-Cu(In,Ga)Se2 heteroeklem güneş pili incelenmiştir. Heteroeklem güneş pilinde etkin olan akım iletim mekanizması karanlıkta gerçekleştirilen sıcaklık bağımlı akım-gerilim ölçümleri yardımı ile belirlenmiştir. %11.9 değerindeki verime sahip güneş pilinde, 1.0 eV aktivasyon ve 119 meV karakteristik tünelleme enerji değerleri ile ara yüzeyden tünellemenin çoğalttığı yeniden birleşme (recombination) mekanizmasının karanlıktaki akım iletiminde etkin olduğu belirlenmiştir.

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Cite This Article

BAYHAN, H., KAVASOĞLU, S., OKTİK, Ş. (2022). Determination of current transport mechanism in n-CdS/p-Cu(In, Ga)Se2 heterojunction solar cell. Fırat Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, Cilt: 13 - Sayı: 1, 97–102. https://ajindex.com/articles/513854

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