The extracted values are found to be in good agreement with those calculated experimentally from dark current-voltage characteristics.
📌 3 Key Takeaways
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Objective & Hypothesis:The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data.
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Key Findings & Data:The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data.
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Conclusion & Impact:The extracted values are found to be in good agreement with those calculated experimentally from dark current-voltage characteristics.
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:Ideality factor · Lambert W-function · Solar cell.
Abstract
The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good agreement with those calculated experimentally from dark current-voltage characteristics.
Özet
The paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good agreement with those calculated experimentally from dark current-voltage characteristics.
BAYHAN, H., KAVASOĞLU, A. S. (2007). Exact Analytical Solution of the Diode Ideality Factor of a pn Junction Device Using Lambert W-function Model. Turkish Journal of Physics, Cilt: 31 - Sayı: 1, 7–10. https://ajindex.com/articles/378145